MJE340G datasheet(2/4 Pages) ONSEMI

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Giải thích chi tiết về linh kiện	Plastic Medium?뭁ower NPN Silicon Transistor

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MJE340

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28

0

TC, CASE TEMPERATURE (°C)

0

20

40

80

120

160

20

12

MJE340

32

24

16

8.0

4.0

1.0

10

IC, COLLECTOR CURRENT (mA)

0

20

30

50

100

200

500

0.4

0.8

0.6

0.2

300

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = 10 V

Figure 1. Power Temperature Derating

Figure 2. “On” Voltages

60

100

140

IC/IB = 5.0

Figure 3. MJE340

1.0

10

VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)

0.5

0.01

50

100

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMAL LIMIT TC = 25°C

SINGLE PULSE

dc

10 ms

0.3

0.05

20

30

1.0ms

200

300

0.2

70

0.1

0.03

0.02

TJ = 150°C

500 ms

ACTIVE−REGION SAFE OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.The data of Figure 3 is

based on TJ(pk) = 150_C; TC is variable depending on

conditions. Second breakdown pulse limits are valid for

duty cycles to 10% provided TJ(pk) v 150_C. At high case

temperatures, thermal limitations will reduce the power that

can be handled to values less than the limitations imposed by

second breakdown.

Số phần tương tự - MJE340G

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
ON Semiconductor	MJE340G	118Kb / 4P	Plastic Medium-Power NPN Silicon Transistor December, 2013 ??Rev. 13
ON Semiconductor	MJE340G	118Kb / 4P	Plastic Medium-Power NPN Silicon Transistor December, 2013 ??Rev. 13

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