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STW45NM50FD bảng dữ liệu(PDF) 5 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 500 V, 0.07 廓, 45 A, TO-247 FDmesh??Power MOSFET (with fast diode)
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STW45NM50FD
Electrical characteristics
Doc ID 7955 Rev 10
5/12
Table 7.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ. Max. Unit
td(on)
tr
Turn-on delay time
Rise time
VDD=250 V, ID= 22.5 A,
RG=4.7 Ω, VGS=10 V
Figure 15
-
26.5
107.5
-
ns
ns
tr(Voff)
tf
tc
Off-voltage rise time
Fall time
Cross-over time
VDD=400 V, ID= 45 A,
RG=4.7 Ω, VGS=10 V
Figure 15
-
21.6
87.7
110.9
-
ns
ns
ns
Table 8.
Source drain diode
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
ISD
Source-drain current
-
45
A
ISDM
(1)
1.
Pulse width limited by safe operating area
Source-drain current (pulsed)
-
180
A
VSD
(2)
2.
Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
ISD = 45 A, VGS = 0
-
1.5
V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 45 A, VDD = 100 V
di/dt = 100 A/µs,
(see Figure 18)
-
200
1600
16
ns
nC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD= 45 A, Tj = 150 °C
di/dt = 100 A/µs,
VDD=100 V, (see Figure 18)
-
324
4017
24.8
ns
nC
A


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