BTB16-800BW3G datasheet(5/6 Pages) ONSEMI

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5

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. Typical Gate Trigger Current Variation

TJ, JUNCTION TEMPERATURE (°C)

Figure 7. Typical Gate Trigger Voltage Variation

Figure 8. Simplified Test Circuit to Measure the Critical Rate of Rise of Commutating Current (di/dt)c

LL

1N4007

200 V

+

MEASURE

I

-

CHARGE

CONTROL

CHARGE

TRIGGER

NON‐POLAR

CL

51

W

MT2

MT1

1N914

G

200 VRMS

ADJUST FOR

ITM, 60 Hz VAC

Note: Component values are for verification of rated (di/dt)c. See AN1048 for additional information.

1

10

100

VD = 12 V

RL = 30 W

Q3

Q1

Q2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

VD = 12 V

RL = 30 W

Q1

Q3

Q2

−40 −25 −10

5

20

125

110

95

80

65

50

35

−40 −25 −10

5

20

125

110

95

80

65

50

35

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Tiger Electronic Co.,Lt...	BTB16-800BW	100Kb / 1P	16A TRIACS
Kersemi Electronic Co.,...	BTB16-800BW	1Mb / 6P	16 A Snubberless, logic level and standard Triacs
STMicroelectronics	BTB16-800BW	217Kb / 18P	Snubberless™, logic level and standard 16 A Triacs DS2114 - Rev 11 - May 2018
	BTB16-800BWRG	99Kb / 9P	16A TRIACS
	BTB16-800BWRG	217Kb / 18P	Snubberless™, logic level and standard 16 A Triacs DS2114 - Rev 11 - May 2018

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nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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