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BTB16-600CW3G bảng dữ liệu(PDF) 2 Page - ON Semiconductor

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Giải thích chi tiết về linh kiện  Triacs Silicon Bidirectional Thyristors
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2
THERMAL CHARACTERISTICS
Characteristic
Symbol
Value
Unit
Thermal Resistance,
Junction-to-Case
Junction-to-Ambient
RqJC
RqJA
2.1
60
°C/W
Maximum Lead Temperature for Soldering Purposes 1/8
″ from Case for 10 seconds
TL
260
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM; Gate Open)
TJ = 25°C
TJ = 125°C
IDRM/
IRRM
-
-
-
-
0.005
2.0
mA
ON CHARACTERISTICS
Peak On‐State Voltage (Note 2)
(ITM = ±22.5 A Peak)
VTM
-
-
1.55
V
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 33 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IGT
2.0
2.0
2.0
-
-
-
35
35
35
mA
Holding Current
(VD = 12 V, Gate Open, Initiating Current = ±500 mA)
IH
-
-
50
mA
Latching Current (VD = 12 V, IG = 1.2 x IGT)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
IL
-
-
-
-
-
-
60
65
60
mA
Gate Trigger Voltage (VD = 12 V, RL = 33 W)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGT
0.5
0.5
0.5
-
-
-
1.7
1.1
1.1
V
Gate Non-Trigger Voltage (TJ = 125°C)
MT2(+), G(+)
MT2(+), G(-)
MT2(-), G(-)
VGD
0.2
0.2
0.2
-
-
-
-
-
-
V
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current, See Figure 10.
(Gate Open, TJ = 125°C, No Snubber)
(dI/dt)c
6.0
-
-
A/ms
Critical Rate of Rise of On-State Current
(TJ = 125°C, f = 120 Hz, IG = 2 x IGT, tr ≤ 100 ns)
dI/dt
-
-
50
A/
ms
Critical Rate of Rise of Off‐State Voltage
(VD = 0.66 x VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
dV/dt
1000
-
-
V/
ms
2. Indicates Pulse Test: Pulse Width
≤ 2.0 ms, Duty Cycle ≤ 2%.


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