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9 / 29 page REV. A ADM1030 –9– ALERT RESPONSE ADDRESS Alert Response Address (ARA) is a feature of SMBus devices that allows an interrupting device to identify itself to the host when multiple devices exist on the same bus. The INT output can be used as an interrupt output or can be used as an SMBALERT. One or more INT outputs can be connected to a common SMBALERT line connected to the master. If a device’s INT line goes low, the following procedure occurs: 1. SMBALERT pulled low. 2. Master initiates a read operation and sends the Alert Response Address (ARA = 0001 100). This is a general call address that must not be used as a specific device address. 3. The device whose INT output is low responds to the Alert Response Address, and the master reads its device address. The address of the device is now known and can be interro- gated in the usual way. 4. If more than one device’s INT output is low, the one with the lowest device address will have priority, in accordance with normal SMBus arbitration. 5. Once the ADM1030 has responded to the Alert Response Address, it will reset its INT output; however, if the error condition that caused the interrupt persists, INT will be reasserted on the next monitoring cycle. TEMPERATURE MEASUREMENT SYSTEM Internal Temperature Measurement The ADM1030 contains an on-chip bandgap temperature sen- sor. The on-chip ADC performs conversions on the output of this sensor and outputs the temperature data in 10-bit two’s complement format. The resolution of the local temperature sensor is 0.25 C. The format of the temperature data is shown in Table II. External Temperature Measurement The ADM1030 can measure the temperature of an external diode sensor or diode-connected transistor, connected to Pins 9 and 10. These pins are a dedicated temperature input channel. The function of Pin 7 is as a THERM input/output and is used to flag overtemperature conditions. The forward voltage of a diode or diode-connected transistor, operated at a constant current, exhibits a negative temperature coefficient of about –2 mV/ C. Unfortunately, the absolute value of VBE, varies from device to device, and individual calibration is required to null this out, so the technique is unsuitable for mass production. The technique used in the ADM1030 is to measure the change in VBE when the device is operated at two different currents. This is given by: DVBE = KT/q ¥ ln (N) where: K is Boltzmann’s constant. q is charge on the carrier. T is absolute temperature in Kelvins. N is ratio of the two currents. Figure 3 shows the input signal conditioning used to measure the output of an external temperature sensor. This figure shows the external sensor as a substrate transistor, provided for tempera- ture monitoring on some microprocessors, but it could equally well be a discrete transistor. LOW-PASS FILTER fC = 65kHz BIAS DIODE REMOTE SENSING TRANSISTOR I N � IIBIAS D+ D– VOUT+ VOUT– TO ADC VDD Figure 3. Signal Conditioning If a discrete transistor is used, the collector will not be grounded, and should be linked to the base. If a PNP transistor is used, the base is connected to the D– input and the emitter to the D+ input. If an NPN transistor is used, the emitter is connected to the D– input and the base to the D+ input. One LSB of the ADC corresponds to 0.125 C, so the ADM1030 can theoretically measure temperatures from –127 C to +127.75 C, although –127 C is outside the operating range for the device. The extended temperature resolution data format is shown in Tables III and IV. Table II. Temperature Data Format (Local Temperature and Remote Temperature High Bytes) Temperature (�C) Digital Output –128 C 1000 0000 –125 C 1000 0011 –100 C 1001 1100 –75 C 1011 0101 –50 C 1100 1110 –25 C 1110 0111 –1 C 1111 1111 0 C 0000 0000 +1 C 0000 0001 +10 C 0000 1010 +25 C 0001 1001 +50 C 0011 0010 +75 C 0100 1011 +100 C 0110 0100 +125 C 0111 1101 +127 C 0111 1111 Rev. 2 | Page 9 of 29 | www.onsemi.com |
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