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2SK1119 bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor

tên linh kiện 2SK1119
Giải thích chi tiết về linh kiện  DC−DC Converter and Motor Drive Applications
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nhà sản xuất  TOSHIBA [Toshiba Semiconductor]
Trang chủ  http://www.semicon.toshiba.co.jp/eng
Logo TOSHIBA - Toshiba Semiconductor

2SK1119 bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor

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2SK1119
2009-09-29
2
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
Drain cut−off current
IDSS
VDS = 800 V, VGS = 0 V
300
μA
Drain−source breakdown
voltage
V (BR) DSS
ID = 10 mA, VGS = 0 V
1000
V
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
1.5
3.5
V
Drain−source ON resistance
RDS (ON)
VGS = 10 V, ID = 2 A
3.0
3.8
Forward transfer admittance
|Yfs|
VDS = 20 V, ID = 2 A
1.0
2.0
S
Input capacitance
Ciss
700
Reverse transfer capacitance
Crss
55
Output capacitance
Coss
VDS = 25 V, VGS = 0 V, f = 1 MHz
100
pF
Rise time
tr
18
Turn−on time
ton
30
Fall time
tf
12
Switching time
Turn−off time
toff
70
ns
Total gate charge (Gate−source
plus gate−drain)
Qg
60
Gate−source charge
Qgs
35
Gate−drain (“miller”) charge
Qgd
VDD ≈ 400 V, VGS = 10 V, ID = 6 A
25
nC
Source−Drain Ratings and Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Continuous drain reverse current
(Note 1)
IDR
4
A
Pulse drain reverse current
(Note 1)
IDRP
12
A
Forward voltage (diode)
VDSF
IDR = 4 A, VGS = 0 V
−1.9
V
Marking
Lot No.
Note 2
K1119
Part No. (or abbreviation code)
Note 2: A line under a Lot No. identifies the indication of product
Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to
environmental matters such as the RoHS compatibility of Product.
The RoHS is the Directive 2002/95/EC of the European Parliament
and of the Council of 27 January 2003 on the restriction of the use of
certain hazardous substances in electrical and electronic equipment.


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