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MC9S08JS16 bảng dữ liệu(PDF) 8 Page - Freescale Semiconductor, Inc |
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MC9S08JS16 bảng dữ liệu(HTML) 8 Page - Freescale Semiconductor, Inc |
8 / 32 page MC9S08JS16 Series MCU Data Sheet, Rev. 4 Electrical Characteristics Freescale Semiconductor 8 PD = Pint + PI/OPint = IDD × VDD, Watts — chip internal power PI/O = Power dissipation on input and output pins — user determined For most applications, PI/O << Pint and can be neglected. An approximate relationship between PD and TJ (if PI/O is neglected) is: PD = K ÷ (TJ + 273°C) Eqn. 2 Solving Equation 1 and Equation 2 for K gives: K = PD × (TA + 273°C) + θJA × (PD) 2 Eqn. 3 where K is a constant pertaining to the particular part. K can be determined from Equation 3 by measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 1 and Equation 2 iteratively for any value of TA. 3.4 Electrostatic Discharge (ESD) Protection Characteristics Although damage from static discharge is much less common on these devices than on early CMOS circuits, normal handling precautions must be used to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage. This device was qualified to AEC-Q100 Rev E. A device is considered to have failed if, after exposure to ESD pulses, the device no longer meets the device specification requirements. Complete DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot temperature, unless specified otherwise in the device specification. 3.5 DC Characteristics This section includes information about power supply requirements, I/O pin characteristics, and power supply current in various operating modes. Table 5. ESD Protection Characteristics Parameter Symbol Value Unit ESD Target for Machine Model (MM) — MM circuit description VTHMM 200 V ESD Target for Human Body Model (HBM) — HBM circuit description VTHHBM 2000 V Table 6. DC Characteristics Num C Parameter Symbol Min Typical1 Max Unit 1 Operating voltage2 — 2.7 — 5.5 V |
Số phần tương tự - MC9S08JS16 |
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Mô tả tương tự - MC9S08JS16 |
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