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STPSC606D bảng dữ liệu(PDF) 1 Page - STMicroelectronics

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September 2009
Doc ID 16284 Rev 1
1/8
8
STPSC606
600 V power Schottky silicon carbide diode
Features
■ No or negligible reverse recovery
■ Switching behavior independent of
temperature
■ Dedicated to PFC boost diode
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide bandgap material
allows the design of a Schottky diode structure
with a 600 V rating. Due to the Schottky
construction no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
ST SiC diodes will boost the performance of PFC
operations in hard switching conditions.
Table 1.
Device summary
IF(AV)
6 A
VRRM
600 V
Tj (max)
175 °C
QC (typ)
6 nC
K
K
A
K
A
NC
TO-220AC
STPSC606D
D2PAK
STPSC606G
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