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STPSC606 bảng dữ liệu(PDF) 2 Page - STMicroelectronics

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Characteristics
STPSC606
2/8
Doc ID 16284 Rev 1
1
Characteristics
To evaluate the conduction losses use the following equation:
P = 1.20x IF(AV) + 0.15 x IF
2
(RMS)
Table 2.
Absolute ratings (limiting values at 25 °C unless otherwise specified)
Symbol
Parameter
Value
Unit
VRRM
Repetitive peak reverse voltage
600
V
IF(RMS) Forward rms current
18
A
IF(AV)
Average forward current
Tc = 125 °C, δ = 0.5
6
A
IFSM
Surge non repetitive forward
current
tp = 10 ms sinusoidal, Tc = 25 °C
tp = 10 ms sinusoidal, Tc = 125 °C
tp = 10 µs square, Tc = 25 °C
27
22
110
A
IFRM
Repetitive peak forward current
δ = 0.1, Tc = 110 °C, Tj = 150 °C
27
A
Tstg
Storage temperature range
-55 to +175
°C
Tj
Operating junction temperature range
-40 to +175
°C
Table 3.
Thermal resistance
Symbol
Parameter
Value
Unit
Rth(j-c)
Junction to case
2.8
°C/W
Table 4.
Static electrical characteristics (per diode)
Symbol
Parameter
Tests conditions
Min.
Typ.
Max.
Unit
IR
(1)
1.
tp = 10 ms, δ < 2%
Reverse leakage
current
Tj = 25 °C
VR = VRRM
-15
75
µA
Tj = 150 °C
-
100
750
VF
(2)
2.
tp = 500 µs, δ < 2%
Forward voltage drop
Tj = 25 °C
IF = 6 A
-1.4
1.7
V
Tj = 150 °C
-
1.6
2.1
Table 5.
Other parameters
Symbol
Parameter
Test conditions
Typ.
Unit
Qc
Total capacitive charge
Vr = 400 V, IF = 6 A dIF/dt = -200 A/µs
Tj = 150 °C
6nC
C
Total capacitance
Vr = 0 V, Tc = 25 °C, F = 1 Mhz
375
pF
Vr = 400 V, Tc = 25 °C, F = 1 Mhz
30


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