BUK7909-75AIE datasheet(6/13 Pages) NXP

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BUK7909-75AIE_2

Product data sheet

Rev. 02 — 17 February 2009

6 of 13

NXP Semiconductors

BUK7909-75AIE

N-channel TrenchPLUS standard level FET

6.

Characteristics

Table 6.

Characteristics

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

Static characteristics

V(BR)DSS

drain-source

breakdown voltage

ID =0.25mA; VGS =0V; Tj =25°C

75

-

V

ID =0.25mA; VGS =0V; Tj =-55 °C

70

-

V

VGS(th)

gate-source threshold

voltage

ID =1mA; VDS = VGS; Tj =25°C;

see Figure 9

234

V

ID =1mA; VDS = VGS; Tj = 175 °C;

see Figure 9

1-

-

V

ID =1mA; VDS = VGS; Tj =-55 °C;

see Figure 9

--4.4

V

IDSS

drain leakage current

VDS =75V; VGS =0V; Tj =25°C

-

0.1

10

µA

VDS =75V; VGS =0V; Tj = 175 °C

-

250

µA

V(BR)GSS

gate-source breakdown

voltage

IG =1mA; VDS =0V; Tj >-55 °C;

Tj < 175 °C

20

22

-

V

IG =-1mA; VDS =0V; Tj >-55 °C;

Tj < 175 °C

20

22

-

V

IGSS

gate leakage current

VDS =0V; VGS =10V; Tj = 25 °C

-

22

1000

nA

VDS =0V; VGS =-10 V; Tj = 25 °C

-

22

1000

nA

VDS =0V; VGS =10V; Tj = 175 °C

--10

µA

VDS =0V; VGS =-10 V; Tj = 175 °C

--10

µA

RDSon

drain-source on-state

resistance

VGS =10V; ID =50A; Tj =25°C;

see Figure 7; see Figure 8

-8

9

m

Ω

VGS =10V; ID =50A; Tj = 175 °C;

see Figure 7; see Figure 8

--19

m

Ω

ID/Isense

ratio of drain current to

sense current

VGS >10V; Tj >-55 °C; Tj < 175 °C

450

500

550

Dynamic characteristics

QG(tot)

total gate charge

ID =25A; VDS =60V; VGS =10V;

Tj =25°C; see Figure 14

-

121

-

nC

QGS

gate-source charge

-

20

-

nC

QGD

gate-drain charge

-

44

-

nC

Ciss

input capacitance

VGS =0V; VDS =25V; f=1MHz;

Tj =25°C; see Figure 12

-

4700

-

pF

Coss

output capacitance

-

800

-

pF

Crss

reverse transfer

capacitance

-

455

-

pF

td(on)

turn-on delay time

VDS =30V; RL =1.2 Ω; VGS =10V;

RG(ext) =10 Ω; Tj =25 °C

-35

-

ns

tr

rise time

-

108

-

ns

td(off)

turn-off delay time

-

185

-

ns

tf

fall time

-

100

-

ns

LD

internal drain

inductance

measured from upper edge of drain

mounting base to centre of die; Tj =25°C

-2.5

-

nH

LS

internal source

inductance

measured from source lead to source

bond pad; Tj =25°C

-7.5

-

nH

Số phần tương tự - BUK7909-75AIE

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Nexperia B.V. All right...	BUK7909-75AIE	724Kb / 13P	N-channel TrenchPLUS standard level FET Rev. 02 - 17 February 2009
NXP Semiconductors	BUK7909-75AIE	226Kb / 13P	N-channel TrenchPLUS standard level FET Rev. 02-17 February 2009

More results

Mô tả tương tự - BUK7909-75AIE

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
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More results

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