BUK7Y102-100B datasheet(1/14 Pages) NXP

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BUK7Y102-100B

N-channel TrenchMOS standard level FET

Rev. 03 — 7 April 2010

Product data sheet

1.

Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

 Q101 compliant

 Suitable for standard level gate drive

sources

 Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

 12 V, 24 V and 42 V loads

 Automotive systems

 DC-to-DC converters

 General purpose power switching

 Solenoid drivers

1.4 Quick reference data

Table 1.

Quick reference data

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source

voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

100

V

ID

drain current

VGS =10V; Tmb =25°C;

see Figure 1; see Figure 4

--15

A

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

--60

W

Static characteristics

RDSon

drain-source

on-state

resistance

VGS =10V; ID =5A;

Tj =25°C; see Figure 12;

see Figure 13

-86

102

m

Ω

Avalanche ruggedness

EDS(AL)S

non-repetitive

drain-source

avalanche energy

ID =15A; Vsup ≤ 100 V;

RGS =50 Ω; VGS =10V;

Tj(init) = 25 °C; unclamped

--35

mJ

Dynamic characteristics

QGD

gate-drain charge

ID =5A; VDS =80 V;

VGS = 10 V; see Figure 16

-4.7

-nC

Số phần tương tự - BUK7Y102-100B

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Nexperia B.V. All right...	BUK7Y102-100B	938Kb / 14P	N-channel TrenchMOS standard level FET Rev. 03 - 7 April 2010
NXP Semiconductors	BUK7Y102-100B	358Kb / 14P	N-channel TrenchMOS standard level FET Rev. 03-7 April 2010

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