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BUK7L11-34ARC bảng dữ liệu(PDF) 6 Page - NXP Semiconductors

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BUK7L11-34ARC_5
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 05 — 17 February 2009
6 of 15
NXP Semiconductors
BUK7L11-34ARC
N-channel TrenchPLUS standard level FET
6.
Characteristics
Table 6.
Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DG
drain-gate (Zener
diode) breakdown
voltage
ID =1mA; VGS =0V; Tj =25°C
34
-
45
V
ID =1mA; VGS =0V; Tj =-55 °C
34
-
45
V
VDS(CL)
drain-source clamping
voltage
IGS(CL) =-2mA; ID =1A; Tj =25°C;
see Figure 12; see Figure 18
-41
-
V
VGS(th)
gate-source threshold
voltage
ID =1mA; VDS = VGS; Tj =25°C;
see Figure 13; see Figure 7
2.2
3
3.8
V
ID =1mA; VDS = VGS; Tj = 150 °C;
see Figure 13; see Figure 7
1.5
-
-
V
ID =1mA; VDS = VGS; Tj = 175 °C;
see Figure 13; see Figure 7
1.2
-
-
V
ID =1mA; VDS = VGS; Tj =-55 °C;
see Figure 13; see Figure 7
--4.2
V
IDSS
drain leakage current
VDS =16V; VGS =0V; Tj =25°C
-
0.1
2
µA
VDS =16V; VGS =0V; Tj = 150 °C
-
3
50
µA
VDS =16V; VGS =0V; Tj = 175 °C
-
18
250
µA
V(BR)GSS
gate-source breakdown
voltage
IG =1mA; VDS =0V; Tj >-55 °C;
Tj < 175 °C; see Figure 18; see Figure 19
20
22
-
V
IG =-1mA; VDS =0V; Tj >-55 °C;
Tj < 175 °C; see Figure 18; see Figure 19
20
22
-
V
IGSS
gate leakage current
VDS =0V; VGS =10V; Tj =25°C
-
5
1000
nA
VDS =0V; VGS =-10 V; Tj =25°C
-
5
1000
nA
VDS =0V; VGS =10V; Tj = 175 °C
--50
µA
VDS =0V; VGS =-10 V; Tj = 175 °C
--50
µA
VDS =0V; VGS =16V; Tj = 175 °C
-
-
150
µA
RDSon
drain-source on-state
resistance
VGS =10V; ID =30A; Tj =25°C;
see Figure 14; see Figure 6
-8
11
m
VGS =10V; ID =30A; Tj = 175 °C;
see Figure 14; see Figure 6
--20.9
m
VGS =16V; ID =30A; Tj =25°C
-
7
9.7
m
RG
internal gate resistance
(AC)
f=1MHz; Tj =25 °C
-
11
-
Dynamic characteristics
QG(tot)
total gate charge
ID =25A; VDS =27V; VGS =10V;
Tj =25°C; see Figure 16
-53
-
nC
QGS
gate-source charge
-
11
-
nC
QGD
gate-drain charge
-
20
-
nC
Ciss
input capacitance
VGS =0V; VDS =25V; f=1MHz;
Tj =25°C; see Figure 17
-
1880
2506
pF
Coss
output capacitance
-
640
768
pF
Crss
reverse transfer
capacitance
-
400
548
pF


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