SM6K2

Transistors

Rev.B

2/4

Electrical characteristics (Ta=25

°C)

<It is the same characteristics for the Tr1 and Tr2.>

Parameter

Test Conditions

=0V

f

=1MHz

=10V

=10V

=300Ω

=10Ω

µA

pF

Ω

S

Unit

V

µA

V

pF

pF

ns

ns

ns

ns

nC

nC

−

−

60

−

1

−

0.1

Min.

−

−

−

−

−

−

−

−

15

−

−

−

−

1.7

−

Typ.

8

4

6

5

12

95

0.3

0.6

−

±10

−

1

2.5

2.4

−

2.8

4.0

−

Max.

−

−

−

−

−

−

−

nC

=200mA

=10V

−

2.2

4.4

−

∗ Pulsed

Symbol

∗

∗

∗

∗

∗

∗

∗

∗

∗

Gate leakage current

Drain-source breakdown voltage

Drain cutoff current

Gate threshold voltage

Drain-source on-state resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

Gate-source charge

Gate-drain charge

Body diode characteristics (Source-drain) (Ta=25

°C)

<It is the same characteristics for the Tr1 and Tr2.>

−−

1.2

V

Forward voltage

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions