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1 / 14 page BUK7Y18-55B N-channel TrenchMOS standard level FET Rev. 03 — 18 February 2010 Objective data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for standard level gate drive sources Suitable for thermally demanding environments due to 175 °C rating 1.3 Applications 12 V and 24 V loads Advanced braking systems (ABS) Automotive systems Engine management General purpose power switching Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - - 55 V ID drain current VGS =10V; Tmb =25°C; see Figure 1 and 3 - - 47.4 A Ptot total power dissipation Tmb = 25 °C; see Figure 2 --85 W Dynamic characteristics QGD gate-drain charge ID =20 A; VDS =44V; VGS = 10 V; see Figure 15 -8.1 -nC Static characteristics RDSon drain-source on-state resistance VGS =10V; ID =20 A; Tj = 25 °C; see Figure 12 and 13 - 12.7 18 m Ω Avalanche ruggedness EDS(AL)S non-repetitive drain-source avalanche energy ID = 47.4 A; Vsup ≤ 55 V; RGS =50 Ω; VGS =10V; Tj(init) = 25 °C; unclamped --77 mJ |
Số phần tương tự - BUK7Y18-55B |
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Mô tả tương tự - BUK7Y18-55B |
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