BUK7Y18-55B datasheet(1/14 Pages) NXP

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BUK7Y18-55B

N-channel TrenchMOS standard level FET

Rev. 03 — 18 February 2010

Objective data sheet

1.

Product profile

1.1 General description

Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using NXP High-Performance Automotive (HPA) TrenchMOS technology. This

product has been designed and qualified to the appropriate AEC standard for use in

automotive critical applications.

1.2 Features and benefits

Q101 compliant

Suitable for standard level gate drive

sources

Suitable for thermally demanding

environments due to 175 °C rating

1.3 Applications

12 V and 24 V loads

Advanced braking systems (ABS)

Automotive systems

Engine management

General purpose power switching

Motors, lamps and solenoids

1.4 Quick reference data

Table 1.

Quick reference

Symbol Parameter

Conditions

Min

Typ

Max

Unit

VDS

drain-source voltage

Tj ≥ 25 °C; Tj ≤ 175 °C

-

55

V

ID

drain current

VGS =10V; Tmb =25°C;

see Figure 1 and 3

-

47.4

A

Ptot

total power

dissipation

Tmb = 25 °C; see Figure 2

--85

W

Dynamic characteristics

QGD

gate-drain charge

ID =20 A; VDS =44V;

VGS = 10 V; see Figure 15

-8.1

-nC

Static characteristics

RDSon

drain-source

on-state resistance

VGS =10V; ID =20 A;

Tj = 25 °C; see Figure 12

and 13

-

12.7

18

m

Ω

Avalanche ruggedness

EDS(AL)S non-repetitive

drain-source

avalanche energy

ID = 47.4 A; Vsup ≤ 55 V;

RGS =50 Ω; VGS =10V;

Tj(init) = 25 °C; unclamped

--77

mJ

Số phần tương tự - BUK7Y18-55B

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