CYStech Electronics Corp.

Spec. No. : C451Q8

Issued Date : 2009.05.13

Revised Date :

Page No. : 4/6

MTB07P03Q8

CYStek Product Specification

- 4.5V

-V - Drain-to-Source Voltage(V)

0

0

DS

1

GS

V = - 10V

- 6.0V

- 3.5V

- 3.0V

23

- 4.0V

On-Region Characteristics

60

48

36

24

12

Characteristic Curves

-4.0V

-4.5V

-5.0V

-6.0V

-10V

On-ResistanceVariationwithDrainCurrent andGateVoltage

0

15

30

45

60

0.0

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.5

T - Junction Temperature (° C)

-50

0.6

0.8

1.0

J

-25

0

25

50

D

V

= - 10V

1.2

1.4

1.6

GS

150

100

75

125

175

On-Resistance Variation with Temperature

I = - 15 A

2

4

GS

8

610

D

I = - 7.5 A

- V - Gate-Source Voltage( V )

On-Resistance Variation with Gate-Source Voltage

0.030

0.025

0.020

0.015

0.010

0.005

0

T = 125° C

A

T = 25° C

A

-V - Gate-to-Source Voltage(V)

1.5

0

10

GS

22.5

V = - 5V

20

30

40

DS

3.5

34

T = 125° C

A

- 55° C

25° C

Transfer Characteristics

Body Diode Forward Voltage Variation with Source Current and Temperature

25° C

-V - Body Diode Forward Voltage(V)

0.6

0.1

0.0001

0

0.001

0.01

SD

0.2

0.4

V = 0V

10

1

100

T = 125°C

A

GS

0.8

1.0

-55°C

1.2