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TLPYE23TP bảng dữ liệu(PDF) 2 Page - Toshiba Semiconductor |
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TLPYE23TP bảng dữ liệu(HTML) 2 Page - Toshiba Semiconductor |
2 / 7 page TLPGE23TP(F),TLFGE23TP(F),TLGE23TP(F),TLPYE23TP(F) 2005-09-12 2 Electrical and Optical Characteristics (Ta = 25°C) Typ. Emission Wavelength Luminous Intensity IV Forward Voltage VF Reverse Current IR Product Name λd λP ∆λ IF Min Typ. IF Typ. Max IF Max VR TLPGE23TP(F) 558 (562) 14 20 850 3000 20 2.1 2.4 20 50 4 TLFGE23TP(F) 565 (568) 15 20 1530 5000 20 2.0 2.4 20 50 4 TLGE23TP(F) 571 (574) 17 20 2720 7000 20 2.0 2.4 20 50 4 TLPYE23TP(F) 580 (583) 14 20 2720 8000 20 2.0 2.4 20 50 4 Unit nm mA mcd mA V mA µA V Precautions Please be careful of the following: • Soldering temperature: 260°C max, soldering time: 3 s max (soldering portion of lead: up to 2 mm from the body of the device) • If the lead is formed, the lead should be formed up to 5 mm from the body of the device without forming stress to the resin. Soldering should be performed after lead forming. • This visible LED lamp also emits some IR light. If a photodetector is located near the LED lamp, please ensure that it will not be affected by this IR light. |
Số phần tương tự - TLPYE23TP |
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Mô tả tương tự - TLPYE23TP |
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