2N1613 datasheet(1/3 Pages) COMSET

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NPN 2N1613 – 2N1711

COMSET SEMICONDUCTORS

1/3

The 2N1613 and 2N1711 are NPN transistors mounted in TO-39 metal package with the collector

connected to the case .

They are designed for use in high-performance amplifier, oscillator and switching circuits.

The 2N1711 is also used to advantage in amplifiers where low noise is an important factor.

Compliance to RoHS.

ABSOLUTE MAXIMUM RATINGS

Symbol

Ratings

Value

Unit

VCBO

Collector-Base Voltage

75

V

VCER

Collector-Emitter Voltage (RBE = 10Ω)

50

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current

0.5

A

ICM

Peak Collector Current

1

A

@ Tcase= 25°

3

Watts

@ Tcase= 100°

1.7

Watts

PD

Total Power Dissipation

@ Tamb= 25°

0.8

Watts

TJ

Junction Temperature

200

°C

TStg

Storage Temperature range

-65 to +200

°C

THERMAL CHARACTERISTICS

Symbol

Ratings

Value

Unit

RthJ-c

Thermal Resistance, Junction-case

58

°C/ W

RthJ-amb

Thermal Resistance, Junction-ambient

219

°C/ W

S

SIIL

LIIC

CO

ON

N P

PL

LA

AN

NA

AR

R E

EP

PIIT

TA

AX

XIIA

AL

L T

TR

RA

AN

NS

SIIS

ST

TO

OR

RS

S

Số phần tương tự - 2N1613

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NXP Semiconductors	2N1613	51Kb / 8P	NPN medium power transistor 1997 Apr 11
List of Unclassifed Man...	2N1613	2Mb / 6P	GERMANIUM PNP TRANSISTORS
STMicroelectronics	2N1613	61Kb / 5P	SWITCHES AND UNIVERSAL AMPLIFIERS January 1989
Fairchild Semiconductor	2N1613	378Kb / 10P	NPN Small Signal General Purpose Amplifiers
Micro Electronics	2N1613	92Kb / 2P	NPN LISICON PLANAR EPITAXIAL TRANSISTORS

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Mô tả tương tự - 2N1613

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Micro Electronics	BC413	130Kb / 2P	SILICON PLANAR EPITAXIAL TRANSISTORS
Comset Semiconductor	2N2218A	209Kb / 3P	SILICON PLANAR EPITAXIAL TRANSISTORS
Comset Semiconductor	BSS50A	171Kb / 3P	SILICON PLANAR EPITAXIAL TRANSISTORS
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	BCY70	238Kb / 5P	SILICON PLANAR EPITAXIAL TRANSISTORS
	BC817	204Kb / 3P	SILICON PLANAR EPITAXIAL TRANSISTORS
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Continental Device Indi...	CMBT5087	155Kb / 3P	SILICON PLANAR EPITAXIAL TRANSISTORS

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