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SS12T3 bảng dữ liệu(PDF) 2 Page - ON Semiconductor |
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SS12T3 bảng dữ liệu(HTML) 2 Page - ON Semiconductor |
2 / 5 page NSS12100M3T5G http://onsemi.com 2 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation TA = 25°C Derate above 25 °C PD (Note 1) 460 3.7 mW mW/ °C Thermal Resistance, Junction-to-Ambient RqJA (Note 1) 270 °C/W Total Device Dissipation TA = 25°C Derate above 25 °C PD (Note 2) 625 5.0 mW mW/ °C Thermal Resistance, Junction-to-Ambient RqJA (Note 2) 200 °C/W Thermal Resistance, Junction-to-Lead 3 RqJL 105 °C/W Junction and Storage Temperature Range TJ, Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage, (IC = -10 mAdc, IB = 0) V(BR)CEO -12 - - Vdc Collector-Base Breakdown Voltage, (IC = -0.1 mAdc, IE = 0) V(BR)CBO -12 - - Vdc Emitter-Base Breakdown Voltage, (IE = -0.1 mAdc, IC = 0) V(BR)EBO -5.0 - - Vdc Collector Cutoff Current, (VCB = -12 Vdc, IE = 0) ICBO - -0.01 -0.1 mAdc Emitter Cutoff Current, (VCES = -5.0 Vdc, IE = 0) IEBO - -0.01 -0.1 mAdc ON CHARACTERISTICS DC Current Gain (Note 3) (IC = -10 mA, VCE = -2.0 V) (IC = -500 mA, VCE = -2.0 V) (IC = -1.0 A, VCE = -2.0 V) hFE 200 120 80 - - - - - - Collector-Emitter Saturation Voltage (Note 3) (IC = -0.05 A, IB = -0.005 A) (Note 4) (IC = -0.1 A, IB = -0.002 A) (IC = -0.1 A, IB = -0.010 A) (IC = -0.5 A, IB = -0.050 A) (IC = -1.0 A, IB = -0.100 A) VCE(sat) - - - - - -0.030 -0.060 -0.040 -0.155 -0.350 -0.035 -0.080 -0.060 -0.220 -0.410 V Base-Emitter Saturation Voltage (Note 3) (IC = -1.0 A, IB = -0.01 A) VBE(sat) - 0.95 -1.15 V Base-Emitter Turn-on Voltage (Note 3) (IC = -2.0 A, VCE = -2.0 V) VBE(on) - -1.05 -1.15 V SMALL-SIGNAL CHARACTERISTICS Input Capacitance (VEB = -0.5 V, f = 1.0 MHz) Cibo - 40 50 pF Output Capacitance (VCB = -3.0 V, f = 1.0 MHz) Cobo - 15 20 pF Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 1.0 kW, f = 1.0 MHz, BW = 200 Hz) NF - - 5.0 dB 1. FR-4 @ 100 mm2, 1 oz copper traces. 2. FR-4 @ 500 mm2, 1 oz copper traces. 3. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%. 4. Guaranteed by design but not tested. |
Số phần tương tự - SS12T3 |
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Mô tả tương tự - SS12T3 |
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