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GS150TA25110 bảng dữ liệu(PDF) 2 Page - IXYS Corporation |
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GS150TA25110 bảng dữ liệu(HTML) 2 Page - IXYS Corporation |
2 / 2 page IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim, Germany Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYSRF/Directed Energy, Inc. 2401 Research Blvd. Ste 108, Fort Collins, CO 80526 Phone: (970) 493-1901, Fax: 970-493-1903, www.directedenergy.com © 2003 IXYSRF/Directed Energy, Inc. GS150TA25110 GS150TI25110 GS150TC25110 Fig. 1Typical forward characteristics Fig. 2 Typical junction capacity versus blocking voltage Fig. 3 Typical leakage current vs. voltage at 25C Fig. 4 Typical leakage current vs. temperature at 100V 0.10 1.00 10.00 100.00 0.00 0.50 1.00 1.50 2.00 Volts 0 50 100 150 200 250 300 1.00E-06 1.00E-05 1.00E-04 LEAKAGE CURRENT IN AMPERES 0 20 40 60 80 100 120 140 160 1.00E-06 1.00E-05 1.00E-04 1.00E-03 1.00E-02 LEAKAGE CURRENT IN AMPERES 10 100 1000 0.1 1 10 100 1000 REVERSE BIAS VOLTAGE IN VOLTS CAPACITANCE Explanatory comparison of the basic operational behavior of rectifier diodes and Gallium Arsenide Schottky diodes: Conduction Forward characteristics Turn off characteristics Turn on characteristics By majority + minority carriers V F (IF) Extraction of excess carriers causes temperature dependant reverse recovery (t rr, IRM, Qrr) Delayed saturation leads to V FR Rectifier Diode By majority carriers only V F (IF), see Fig. 1 Reverse current charges junction capacity C J, see Fig. 2; not temperature dependent No turn on overvoltage peak GaAs Schottky Diode Doc #9200-0262 Rev 1 |
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