MCH6001

No. A1601-1/4

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer

's products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer

's

products or equipment.

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Features

•

Low-noise use : NF=1.2dB typ (f=1GHz).

•

High cut-off frequency : fT=16GHz typ (VCE=5V).

•

High gain : |S21e|

•

Composite type with 2 RF transistor MCH4020 in one package facilitating high-density mounting.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Collector-to-Base Voltage

VCBO

15

V

Collector-to-Emitter Voltage

VCEO

8V

Emitter-to-Base Voltage

VEBO

2V

Collector Current

IC

150

mA

Collector Dissipation

PC

When mounted on glass epoxy substrate 1unit

400

mW

Total Dissipation

PT

When mounted on glass epoxy substrate

600

mW

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

-55 to +150

°C

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Collector Cutoff Current

ICBO

VCB=5V, IE=0A

1.0

μA

Emitter Cutoff Current

IEBO

VEB=1V, IC=0A

1.0

μA

DC Current Gain

hFE

VCE=5V, IC=50mA

60

150

Gain-Bandwidth Product

fT

VCE=5V, IC=50mA

13

16

GHz

Marking : GT

Continued on next page.

Note) Pay attention to handling since it is liable to be affected by static electricity due to the high-frequency process adopted.

Ordering number : ENA1601

N1809AB TK IM TC-00002075

SANYO Semiconductors

DATA SHEET

High Frequency Low-Noise Amplifier

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