MC-458CA721ESA-A80 datasheet(6/16 Pages) ELPIDA

tên linh kiện	MC-458CA721ESA-A80

Giải thích chi tiết về linh kiện	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)

Download	16 Pages

Scroll/Zoom	100%

nhà sản xuất	ELPIDA [Elpida Memory]

Trang chủ	http://www.elpida.com/en

Logo

6 / 16 page

Data Sheet E0067N10

6

MC-458CA721ESA, 458CA721PSA, 458CA721XSA

DC Characteristics (Recommended Operating Conditions unless otherwise noted)

Parameter

Symbol

Test condition

MIN.

MAX.

Unit

Notes

Operating current

ICC1

Burst length = 1, tRC

≥ tRC(MIN.)

/CAS latency = 2

-A80

550

mA

1

-A10

/CAS latency = 3

-A80

550

-A10

Precharge standby current in

ICC2P

CKE

≤ VIL(MAX.), tCK = 15 ns

5

mA

power down mode

ICC2PS

CKE

≤ VIL(MAX.), tCK = ∞

5

Precharge standby current in

non power down mode

ICC2N

CKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

Input signals are changed one time during 30 ns.

100

mA

ICC2NS

CKE

≥ VIH(MIN.), tCK = ∞, Input signals are stable.

40

Active standby current in

ICC3P

CKE

≤ VIL(MAX.), tCK = 15 ns

25

mA

power down mode

ICC3PS

CKE

≤ VIL(MAX.), tCK = ∞

20

Active standby current in

non power down mode

ICC3N

CKE

≥ VIH(MIN.), tCK = 15 ns, /CS ≥ VIH(MIN.),

Input signals are changed one time during 30 ns.

150

mA

ICC3NS

CKE

≥ VIH(MIN.), tCK = ∞, Input signals are stable.

100

Operating current

ICC4

tCK

≥ tCK(MIN.), IO = 0 mA

/CAS latency = 2

-A80

725

mA

2

(Burst mode)

-A10

550

/CAS latency = 3

-A80

875

-A10

700

CBR (Auto) refresh current

ICC5

tRC

≥ tRC(MIN.)

/CAS latency = 2

-A80

1,150

mA

3

-A10

/CAS latency = 3

-A80

1,150

-A10

Self refresh current

ICC6

CKE

≤ 0.2 V

10

mA

Input leakage current

II(L)

VI = 0 to 3.6 V, All other pins not under test = 0 V

– 5

+5

µA

Output leakage current

IO(L)

DOUT is disabled, VO = 0 to 3.6 V

–1.5

+1.5

µA

High level output voltage

VOH

IO = – 4.0 mA

2.4

V

Low level output voltage

VOL

IO = + 4.0 mA

0.4

V

Notes 1. ICC1 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC1 is measured on condition that addresses are changed only one time during tCK(MIN.).

2. ICC4 depends on output loading and cycle rates. Specified values are obtained with the output open. In

addition to this, ICC4 is measured on condition that addresses are changed only one time during tCK(MIN.).

3. ICC5 is measured on condition that addresses are changed only one time during tCK(MIN.).

Số phần tương tự - MC-458CA721ESA-A80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NEC	MC-458CA721ESA-A80	142Kb / 6P	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM

More results

Mô tả tương tự - MC-458CA721ESA-A80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
NEC	MC-458CA721ESA	142Kb / 6P	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-458CB64ESB	141Kb / 16P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-458CB64ESB	126Kb / 6P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
NEC	MC-458CB641ES	137Kb / 6P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE SO DIMM
Elpida Memory	MC-458CB642XS	135Kb / 14P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
	MC-458CB641ES	151Kb / 16P	8M-WORD BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULE (SO DIMM)
	MC-45V8AB642KS	150Kb / 16P	8M-WORD BY 64-BIT VirtualChannelTM DYNAMIC RAM MODULE (SO DIMM)
NEC	MC-458CA727	198Kb / 16P	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-458CA727	156Kb / 16P	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE
Elpida Memory	MC-458CA726	159Kb / 16P	8M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE

More results

MC-458CA721ESA-A80 bảng dữ liệu(PDF) 6 Page - Elpida Memory

MC-458CA721ESA-A80 bảng dữ liệu(HTML) 6 Page - Elpida Memory

Số phần tương tự - MC-458CA721ESA-A80

Mô tả tương tự - MC-458CA721ESA-A80

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16

bảng dữ liệu tải về

Link URL