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MCP6V03 bảng dữ liệu(PDF) 4 Page - Microchip Technology |
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MCP6V03 bảng dữ liệu(HTML) 4 Page - Microchip Technology |
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4 / 44 page  MCP6V01/2/3 DS22058C-page 4 © 2008 Microchip Technology Inc. Output Maximum Output Voltage Swing VOL, VOH VSS +15 — VDD − 15 mV G = +2, 0.5V input overdrive Output Short Circuit Current ISC —±7 — mA VDD =1.8V ISC —±22 — mA VDD =5.5V Power Supply Supply Voltage VDD 1.8 — 5.5 V Quiescent Current per amplifier IQ 200 300 400 µA IO = 0 POR Trip Voltage VPOR 1.15 — 1.65 V TABLE 1-1: DC ELECTRICAL SPECIFICATIONS (CONTINUED) Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3, VOUT =VDD/2, VL =VDD/2, RL = 20 kΩ to VL, and CS = GND (refer to Figure 1-5 and Figure 1-6). Parameters Sym Min Typ Max Units Conditions Note 1: Set by design and characterization. Due to thermal junction and other effects in the production environment, these parts can only be screened in production (except TC1; see Appendix B: “Offset Related Test Screens”). 2: Figure 2-18 shows how VCMR changed across temperature for the first three production lots. TABLE 1-2: AC ELECTRICAL SPECIFICATIONS Electrical Characteristics: Unless otherwise indicated, TA = +25°C, VDD = +1.8V to +5.5V, VSS = GND, VCM = VDD/3, VOUT =VDD/2, VL =VDD/2, RL = 20 kΩ to VL, CL = 60 pF, and CS = GND (refer to Figure 1-5 and Figure 1-6). Parameters Sym Min Typ Max Units Conditions Amplifier AC Response Gain Bandwidth Product GBWP — 1.3 — MHz Slew Rate SR — 0.5 — V/µs Phase Margin PM — 65 — ° G = +1 Amplifier Noise Response Input Noise Voltage Eni —0.79 — µVP-P f = 0.01 Hz to 1 Hz Eni —2.5 — µVP-P f = 0.1 Hz to 10 Hz Input Noise Voltage Density eni —120 — nV/ √Hz f < 2.5 kHz eni —45 — nV/ √Hz f = 100 kHz Input Noise Current Density ini —0.6 — fA/ √Hz Amplifier Distortion (Note 1) Intermodulation Distortion (AC) IMD — <1 — µVPK VCM tone = 50 mVPK at 1 kHz, GN = 1, VDD = 1.8V IMD — <1 — µVPK VCM tone = 50 mVPK at 1 kHz, GN = 1, VDD = 5.5V Amplifier Step Response Start Up Time tSTR —500 — µs VOS within 50 µV of its final value Offset Correction Settling Time tSTL — 300 — µs G = +1, VIN step of 2V, VOS within 50 µV of its final value Output Overdrive Recovery Time tODR — 100 — µs G = -100, ±0.5V input overdrive to VDD/2, VIN 50% point to VOUT 90% point (Note 2) Note 1: These parameters were characterized using the circuit in Figure 1-7. Figure 2-37 and Figure 2-38 show both an IMD tone at DC and a residual tone at1 kHz; all other IMD and clock tones are spread by the randomization circuitry. 2: tODR includes some uncertainty due to clock edge timing. |
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