TC2181

REV4_20070504

TRANSCOM, INC., 90 Dasoong 7

Web-Site: www.transcominc.com.tw

Phone: 886-6-5050086

Fax: 886-6-5051602

P 1 / 4

Low Noise and High Dynamic Range Packaged GaAs FETs

FEATURES

PHOTO ENLARGEMENT

! 0.5 dB Typical Noise Figure at 12 GHz

! High Associated Gain: Ga = 12 dB Typical at 12 GHz

! 18.5 dBm Typical Power at 12 GHz

! 13 dB Typical Linear Power Gain at 12 GHz

≥ 9V

! Lg = 0.25

µm, Wg = 160 µm

! Tight Vp ranges control

! High RF input power handling capability

! 100 % DC Tested

! Micro-X Metal Ceramic Package

DESCRIPTION

The TC2181 is a high performance field effect transistor housed in a ceramic micro-x package with TC1101

PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device

suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.

°°°°C)

Symbol

CONDITIONS

MIN

TYP

MAX

UNIT

NF

0.5

0.7

dB

10

12

dB

17.5

18.5

dBm

11

13

dB

48

mA

55

mS

-1.0*

Volts

9

12

Volts

Thermal Resistance

250

°C/W

°°°°C) TYPICAL NOISE PARAMETERS (T

°°°°C)

Symbol

Parameter

Rating

Drain-Source Voltage

7.0 V

Gate-Source Voltage

-3.0 V

Drain Current

Gate Current

160

µA

RF Input Power, CW

18 dBm

Continuous Dissipation

150 mW

Channel Temperature

175

°C

Storage Temperature

- 65

°C to +175 °C

Frequency

(GHz)

(dB)

(dB)

MAG

ANG

Rn/50

2

0.33

18.4

1.00

15

0.42

4

0.35

16.8

0.86

32

0.36

6

0.37

15.2

0.70

53

0.28

8

0.40

13.8

0.53

79

0.20

10

0.46

12.5

0.39

112

0.12

12

0.52

11.5

0.29

153

0.09

14

0.61

11.0

0.26

202

0.08

16

0.77

10.9

0.32

262

0.11

18

0.95

10.6

0.51

332

0.24

(1)TC2181P0710 : Vp = -0.7V to -1.0V (2)TC2181P0811 : Vp = -0.8V to -1.1V (3)TC2181P0912 : Vp = -0.9V to -1.2V

If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details.