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TC2141 bảng dữ liệu(PDF) 1 Page - Transcom, Inc. |
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TC2141 bảng dữ liệu(HTML) 1 Page - Transcom, Inc. |
1 / 4 page TC2141 PRE2_20070504 TRANSCOM, INC., 90 Dasoong 7 th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County, Taiwan. Web-Site: www.transcominc.com.tw Phone: 886-6-5050086 Fax: 886-6-5051602 P 1 / 4 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES PHOTO ENLARGEMENT z0.5 dB Typical Noise Figure at 12 GHz zHigh Associated Gain: Ga = 11.5 dB Typical at 12 GHz z18.5 dBm Typical Power at 12 GHz z12.5 dB Typical Linear Power Gain at 12 GHz zBreakdown Voltage : BVDGO ≥ 9V zLg = 0.25 µm, Wg = 160 µm zTight Vp ranges control zHigh RF input power handling capability z100 % DC Tested zLeadless Air Cavity Plastic Package DESCRIPTION The TC2141 is a high performance field effect transistor housed in a leadless air cavity plastic package with TC1101 PHEMT Chip. It has very low noise figure, high associated gain and high dynamic range that makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (TA=25 °°C) Symbol CONDITIONS MIN TYP MAX UNIT NF Noise Figure at VDS = 2 V, IDS = 10 mA, f = 12GHz 0.5 0.7 dB Ga Associated Gain at VDS = 2 V, IDS = 10 mA, f = 12GHz 10 11.5 dB P1dB Output Power at 1dB Gain Compression Point, f = 12 GHz VDS = 6 V, IDS = 25 mA 17.5 18.5 dBm GL Linear Power Gain, f = 12GHz VDS = 6 V, IDS = 25 mA 11 12.5 dB IDSS Saturated Drain-Source Current at VDS = 2 V, VGS = 0 V 48 mA gm Transconductance at VDS = 2 V, VGS = 0 V 55 mS VP Pinch-off Voltage at VDS = 2 V, ID = 0.32mA -1.0* Volts BVDGO Drain-Gate Breakdown Voltage at IDGO = 0.08mA 9 12 Volts Rth Thermal Resistance 250 °C/W ABSOLUTE MAXIMUM RATINGS (TA=25 °°C) TYPICAL NOISE PARAMETERS (TA=25 °°C) VDS = 2 V, IDS = 10 mA Symbol Parameter Rating VDS Drain-Source Voltage 7.0 V VGS Gate-Source Voltage -3.0 V IDS Drain Current IDSS IGS Gate Current 160 µA Pin RF Input Power, CW 18 dBm PT Continuous Dissipation 150 mW TCH Channel Temperature 175 °C TSTG Storage Temperature - 65 °C to +175 °C + opt Frequency (GHz) NFopt (dB) GA (dB) MAG ANG Rn/50 2 0.35 18.4 0.98 18 0.42 4 0.37 16.8 0.84 35 0.36 6 0.39 15.2 0.67 56 0.28 8 0.42 13.7 0.50 82 0.21 10 0.48 12.3 0.35 115 0.13 12 0.54 11.3 0.25 157 0.10 14 0.63 10.8 0.22 206 0.09 16 0.79 10.6 0.27 266 0.12 18 0.97 10.2 0.46 336 0.25 * For the tight control of the pinch-off voltage range, we divide TC2131 into 3 model numbers to fit customer design requirement (1)TC2131P0710 : Vp = -0.7V to -1.0V (2)TC2131P0811 : Vp = -0.8V to -1.1V (3)TC2131P0912 : Vp = -0.9V to -1.2V If required, customer can specify the requirement in purchasing document. For special Vp requirement, please contact factory for details. |
Số phần tương tự - TC2141 |
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Mô tả tương tự - TC2141 |
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