STM5853QF8RG datasheet(3/7 Pages) STANSON

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STM5853

P Channel Mode MOSFET with Schottky

-3.6A

STANSON TECHNOLOGY

120 Bentley Square, Mountain View, Ca 94040 USA

http://www.stansontech.com

STM5853 2008. V1

ELECTRICAL CHARACTERISTICS (Ta = 25℃ unless otherwise noted )

MOSFET

Parameter

Symbol

Condition

Min

Typ

Max Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS=0V,ID=-250uA

-20

V

Gate Threshold Voltage

VGS(th)

VDS=VGS,ID=-250uA

-0.35

-0.8

V

Gate Leakage Current

IGSS

VDS=0V,VGS=+/-12V

100

nA

VDS=-20V,VGS=0V

-1

Zero Gate Voltage Drain Current

IDSS

VDS=-20V, VGS =0V

Tj=55℃

-5

uA

On-State Drain Current

ID(on)

VDS≦-5V, VGS =-4.5V -6.0

A

Drain-source On-Resistance

RDS(on)

VGS =-4.5V, ID=3.4A

VGS =-2.5V, ID=-2.4A

VGS =-1.8V, ID=-1.7A

0.077

0.098

0.135

Ω

Forward Transconductance

gfs

VDS =-5V, ID=-2.8V

6

S

Diode Forward Voltage

VSD

IS=-1.6A,V VGS=0V

-0.8

-1.2

V

Dynamic

Total Gate Charge

Qg

4.8

8

Gate-Source Charge

Qgs

1.0

Gate-Drain Charge

Qgd

VDS=-6V, VGS =-4.5V

ID=-2.8A

1.0

nC

Input Capacitance

Ciss

485

Output Capacitance

Coss

85

Reverse Transfer Capacitance

Crss

VDS=-6V, VGS =0V

f=1MHz

40

pF

10

25

Turn-On Time

td(on)

tr

13

60

18

70

Turn-Off Time

td(off)

tf

VDD=-6V,RL=6Ω

ID=-1A,VGEN=-4.5V

RG=6Ω

15

60

nS

SCHOTTKY

IF=0.5A

0.38

0.46

V

Forward Voltage Drop

VF

IF=0.5A, Tj=125C

0.33

0.4

V

VR=20V

100

Max Reverse Leakage Current

IR

VR=20V, Tj=85C

1000

nA

Junction Capacitance

CT

VR=10V

31

pF

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