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STE36N50-DA bảng dữ liệu(PDF) 2 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE
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nhà sản xuất  STMICROELECTRONICS [STMicroelectronics]
Trang chủ  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STE36N50-DA bảng dữ liệu(HTML) 2 Page - STMicroelectronics

  STE36N50-DA Datasheet HTML 1Page - STMicroelectronics STE36N50-DA Datasheet HTML 2Page - STMicroelectronics STE36N50-DA Datasheet HTML 3Page - STMicroelectronics STE36N50-DA Datasheet HTML 4Page - STMicroelectronics STE36N50-DA Datasheet HTML 5Page - STMicroelectronics STE36N50-DA Datasheet HTML 6Page - STMicroelectronics STE36N50-DA Datasheet HTML 7Page - STMicroelectronics STE36N50-DA Datasheet HTML 8Page - STMicroelectronics STE36N50-DA Datasheet HTML 9Page - STMicroelectronics  
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DIODE ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Valu e
Unit
VRRM
Repetitive Peak Reverse Voltage
600
V
VRS M
Non Repetitive Peak Reverse Voltage
600
V
IF(RMS)
RMS Forward Current
50
A
IFRM
Repet. Peak Forward Current (tp =5
µs,f= 5KHz)
300
A
Ptot
Total Dissipation at Tc =25
oC70
W
Derating Factor
0.56
W/
oC
THERMAL DATA
Rthj-case
Rthj-case
Rthc-h
Thermal Resist ance Junct ion-case (MOSFET)
Max
Thermal Resist ance Junct ion-case (DIO DE)
Max
Thermal Resist ance Case-heatsink With Conduct ive
Grease Applied
Max
0.3
1.78
0.05
oC/W
oC/W
oC/W
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Uni t
IAR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
14
A
EAS
Single Pulse Avalanche Energy
(st arting Tj =25
oC, I
D =IAR,VDD =50 V)
100
mJ
EAR
Repet itive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
40
mJ
IAR
Avalanche Current, Repetitive or Not-Repetitive
(T c = 100
oC, pulse width limited by Tj max, δ <1%)
9A
MOSFET ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID =1 mA
VGS = 0
500
V
IDSS
Zero Gate Volt age
Drain Current (VGS =0)
VDS =Max Rating
VDS = Max Rating x 0.8
Tc =125
oC
300
1500
µA
µA
IGSS
Gate-body Leakage
Current (VDS =0)
VGS =
± 20 V
± 300
nA
ON (
∗)
Symbol
Parameter
Test Condi tions
Mi n.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage VDS =VGS
ID =1 mA
2
3
4
V
RDS(on)
St atic Drain-source On
Resist ance
VGS =10V
ID =18 A
VGS =10V
ID =18 A
Tc = 100
oC
0.12
0. 14
0. 28
ID(on)
On St ate Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
36
A
STE36N50-DA
2/9


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