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MC9S08LL16 bảng dữ liệu(PDF) 11 Page - Freescale Semiconductor, Inc |
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MC9S08LL16 bảng dữ liệu(HTML) 11 Page - Freescale Semiconductor, Inc |
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11 / 50 page  Electrical Characteristics MC9S08LL16 Series MCU Data Sheet, Rev. 4 Freescale Semiconductor 11 where K is a constant pertaining to the particular part. K can be determined from equation 3 by measuring PD (at equilibrium) for a known TA. Using this value of K, the values of PD and TJ can be obtained by solving Equation 3-1 and Equation 3-2 iteratively for any value of TA. 3.5 ESD Protection and Latch-Up Immunity Although damage from electrostatic discharge (ESD) is much less common on these devices than on early CMOS circuits, normal handling precautions should be taken to avoid exposure to static discharge. Qualification tests are performed to ensure that these devices can withstand exposure to reasonable levels of static without suffering any permanent damage. All ESD testing is in conformity with AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits. During the device qualification, ESD stresses were performed for the human body model (HBM), the machine model (MM) and the charge device model (CDM). A device is defined as a failure if after exposure to ESD pulses the device no longer meets the device specification. Complete DC parametric and functional testing is performed per the applicable device specification at room temperature followed by hot temperature, unless instructed otherwise in the device specification. Table 6. ESD and Latch-up Test Conditions Model Description Symbol Value Unit Human Body Model Series resistance R1 1500 Ω Storage capacitance C 100 pF Number of pulses per pin — 3 Charge Device Model Series resistance R1 0 Ω Storage capacitance C 200 pF Number of pulses per pin — 3 Latch-up Minimum input voltage limit –2.5 V Maximum input voltage limit 7.5 V Table 7. ESD and Latch-Up Protection Characteristics No. Rating1 1 Parameter is achieved by design characterization on a small sample size from typical devices under typical conditions unless otherwise noted. Symbol Min Max Unit 1 Human body model (HBM) VHBM ±2000 — V 2 Charge device model (CDM) VCDM ±500 — V 3 Latch-up current at TA = 85°CILAT ±100 — mA |
Số phần tương tự - MC9S08LL16 |
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Mô tả tương tự - MC9S08LL16 |
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