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BCW68GLT1 bảng dữ liệu(PDF) 1 Page - Motorola, Inc |
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BCW68GLT1 bảng dữ liệu(HTML) 1 Page - Motorola, Inc |
1 / 4 page 1 Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –45 Vdc Collector–Base Voltage VCBO –60 Vdc Emitter–Base Voltage VEBO –5.0 Vdc Collector Current — Continuous IC –800 mAdc DEVICE MARKING BCW68GLT1 = DH THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation FR-5 Board (1) TA = 25°C Derate above 25 °C PD 225 1.8 mW mW/ °C Thermal Resistance, Junction to Ambient R θJA 556 °C/W Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25 °C PD 300 2.4 mW mW/ °C Thermal Resistance, Junction to Ambient R θJA 417 °C/W Junction and Storage Temperature TJ, Tstg – 55 to +150 °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = –10 mAdc, IB = 0) V(BR)CEO –45 — — Vdc Collector–Emitter Breakdown Voltage (IC = –10 µAdc, VEB = 0) V(BR)CES –60 — — Vdc Emitter–Base Breakdown Voltage (IE = –10 µAdc, IC = 0) V(BR)EBO –5.0 — — Vdc Collector Cutoff Current (VCE= –45 Vdc, IE = 0) (VCE= –45 Vdc, IB = 0, TA = 150°C) ICES — — — — –20 –10 nAdc µAdc Emitter Cutoff Current (VEB = –4.0 Vdc, IC = 0) IEBO — — –20 nAdc 1. FR–5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina Thermal Clad is a trademark of the Bergquist Company Order this document by BCW68GLT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW68GLT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) © Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER |
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Mô tả tương tự - BCW68GLT1 |
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