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2SC1213 bảng dữ liệu(PDF) 1 Page - Dc Components |
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2SC1213 bảng dữ liệu(HTML) 1 Page - Dc Components |
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1 / 1 page 2SC1213 DISCRETE SEMICONDUCTORS R DC COMPONENTS CO., LTD. TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for low frequency amplifier applications. Pinning 1 = Emitter 2 = Collector 3 = Base TO-92 Dimensions in inches and (millimeters) .022(0.56) .014(0.36) .050 (1.27) .148(3.76) .132(3.36) Typ .190(4.83) .170(4.33) .100 (2.54) Typ .050 (1.27) Typ .022(0.56) .014(0.36) .190(4.83) .170(4.33) .500 (12.70) Min 2oTyp 5oTyp. 2oTyp 3 2 1 5oTyp. Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 50 V Collector-Emitter Voltage VCEO 50 V Emitter-Base Voltage VEBO 4 V Collector Current IC 500 mA Total Power Dissipation PD 400 mW Junction Temperature TJ +150 o C Storage Temperature TSTG -55 to +150 o C Absolute Maximum Ratings(TA=25oC) Rank B C D Range 60~120 100~200 160~320 Classification of hFE1 Characteristic Symbol Min Typ Max Unit Test Conditions Collector-Base Breakdown Volatge BVCBO 50 - - V IC=100 µA, IE=0 Collector-Emitter Breakdown Voltage BVCEO 50 - - V IC=1mA, IB=0 Emitter-Base Breakdown Volatge BVEBO 4 - - V IE=10 µA, IC=0 Collector Cutoff Current ICBO - - 0.5 µA VCB=20V, IE=0 Emitter Cutoff Current IEBO - - 0.5 µA VEB=5V, IC=0 Collector-Emitter Saturation Voltage(1) VCE(sat) - - 0.6 V IC=150mA, IB=15mA Base-Emitter Saturation Voltage(1) VBE(sat) - - 1.2 V IC=150mA, IB=15mA DC Current Gain(1) hFE1 60 - 320 - IC=10mA, VCE=3V hFE2 35 - - - IC=500mA, VCE=3V Transition Frequency fT 100 160 - MHz IC=20mA, VCE=6V Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) (1)Pulse Test: Pulse Width 380 µs, Duty Cycle 2% |
Số phần tương tự - 2SC1213 |
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Mô tả tương tự - 2SC1213 |
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