STU408D datasheet(1/7 Pages) SAMHOP

tên linh kiện	STU408D

Giải thích chi tiết về linh kiện	Dual N-Channel E nhancement Mode F ield E ffect Transistor

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J uly.25 2006

S T U408D

S amHop Microelectronics C orp.

P R ODUC T S UMMAR Y

V DS S

ID

R DS (ON) ( m W ) Max

40V

16A

30 @ V GS = 10V

40 @ V GS =4.5V

F E AT UR E S

S uper high dense cell design for low R DS(ON).

R ugged and reliable.

TO252-4L package.

ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)

Parameter

S ymbol

Unit

Drain-S ource Voltage

VDS

V

Gate-S ource Voltage

VGS

V

Drain Current-Continuous @ Ta

-Pulsed

ID

11

A

W

IDM

Drain-S ource Diode Forward Current

IS

Maximum Power Dissipation

PD

Operating Junction and S torage

Temperature R ange

TJ, TS TG

-55 to 175

C

a

40

8

20

16

50

25 C

70 C

Ta= 25 C

Ta=70 C

7.7

13.8

A

Limit

TO-252-4L

1

THE R MAL CHAR ACTE R IS TICS

Thermal R esistance, Junction-to-Case

Thermal R esistance, Junction-to-Ambient

R JC

13.6

120

R JA

/W

C

/W

C

D1/D2

S 1

S 2

G1

G2

Dual N-Channel E nhancement Mode Field E ffect Transistor

N-ch

G 1

D1

S 1

G 2

D2

S 2

E S D Protected.

Số phần tương tự - STU408D

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Mô tả tương tự - STU408D

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