STA6611 datasheet(4/10 Pages) SAMHOP

tên linh kiện	STA6611

Giải thích chi tiết về linh kiện	Dual Enhancement Mode Field Effect Transistor ( N and P Channel)

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nhà sản xuất	SAMHOP [SamHop Microelectronics Corp.]

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Figure 1. Output Characteristics

Figure 2. Transfer Characteristics

VGS, Gate-to-Source Voltage (V)

VDS, Drain-to-Source Voltage (V)

4

5

40

32

24

16

8

0

0.5

1

1.5

2

2.5

3

VGS=3V

20

16

12

8

4

0

0.7

1.4

2.1

2.8

3.5

4.2

Tj=125 C

Parameter

Symbol

Condition

Min Typ Max Unit

ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted)

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage

VSD

VGS = 0V, Is =1.7A

N-Ch

0.8

1.2

-0.8

-1.2

VGS = 0V, Is =-1.7A

P-Ch

V

b

C

Notes

c.Guaranteed by design,not subject to production testing.

b.Pulse Test:Pulse Width 300 s,Duty Cycle 2%.

a.Surface Mounted on FR4 Board,t 10sec.

N-Channel

VGS=3.5V

S T A6611

VGS=4.5V

VGS=4V

VGS=10V

-55 C

25 C

ID, Drain C urrent (A)

48

40

32

24

16

8

1

F igure 3. On-R es is tance vs . Drain C urrent

and G ate V oltage

8

16

24

32

40

1

V GS =10V

V GS =4.5V

F igure 4. On-R es is tance Variation with

Drain C urrent and Temperature

1.75

1.60

1.45

1.30

1.15

1.00

0.85

-25

0

25

50

150

T j( C )

125

75

100

V G S =10V

ID=7A

T j, J unction T emperature ( C )

V G S =4.5V

ID=5A

VGS=2.5V

Số phần tương tự - STA6611

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
SamHop Microelectronics...	STA6610	118Kb / 6P	Dual N-Channel E nhancement Mode F ield E ffect Transistor

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