STA4470 datasheet(2/6 Pages) SAMHOP

tên linh kiện	STA4470

Giải thích chi tiết về linh kiện	N-Channel Enhancement Mode Field Effect Transistor

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nhà sản xuất	SAMHOP [SamHop Microelectronics Corp.]

Trang chủ	http://www.samhop.com.tw

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2 / 6 page

Symbol

Min

Typ

Max

Units

BVDSS

40

V

1

IGSS

±100

nA

VGS(th)

1.0

V

10

gFS

26.5

S

VSD

CISS

1720

pF

COSS

230

pF

CRSS

145

pF

Qg

22

nC

23

nC

Qgs

65

nC

Qgd

30

tD(ON)

25

ns

tr

2.5

ns

tD(OFF)

5.5

ns

tf

ns

Gate-Drain Charge

VDS=20V,VGS=0V

SWITCHING CHARACTERISTICS

Gate-Source Charge

VDD=20V

ID=1A

VGS=10V

RGEN=3.3 ohm

Total Gate Charge

Rise Time

Turn-Off Delay Time

VDS=20V,ID=11A,VGS=10V

Fall Time

Turn-On Delay Time

m ohm

VGS=10V , ID=11A

VDS=5V , ID=11A

Input Capacitance

Output Capacitance

DYNAMIC CHARACTERISTICS

RDS(ON)

Drain-Source On-State Resistance

Forward Transconductance

Diode Forward Voltage

IDSS

uA

Gate Threshold Voltage

VDS=VGS , ID=250uA

VDS=32V , VGS=0V

VGS= ±20V , VDS=0V

Zero Gate Voltage Drain Current

Gate-Body Leakage Current

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

OFF CHARACTERISTICS

Parameter

Conditions

Drain-Source Breakdown Voltage

VGS=0V , ID=250uA

Reverse Transfer Capacitance

ON CHARACTERISTICS

3

VGS=4.5V , ID=9.6A

12

m ohm

c

f=1.0MHz

c

VDS=20V,ID=11A,

VGS=10V

DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS

VGS=0V,IS=1.7A

0.74

1.2

V

Notes

a.Surface Mounted on FR4 Board,t < 10sec.

b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.

c.Guaranteed by design, not subject to production testing.

_

STA4470

Ver 1.0

www.samhop.com.tw

Aug,18,2008

2

nC

VDS=20V,ID=11A,VGS=4.5V

12

_

2.0

12

16

IS

Maximum Continuous Drain-Source Diode Forward Current

1.7

A

b

Số phần tương tự - STA4470

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