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SZP-5026Z-EVB2 bảng dữ liệu(PDF) 2 Page - SIRENZA MICRODEVICES

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Giải thích chi tiết về linh kiện  4.9GHz to 5.9GHz 2W InGaP AMPLIFIER
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Preliminary
EDS-105366 Rev C
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SZP-5026Z
Typical 5V Performance with Appropriate Application Circuit (VCC=5V, ICQ=602mA, 802.11a 54Mb/s)
Simplified Device Schematic
Absolute Maximum Ratings
Parameter
Rating
Unit
VC1 Collector Bias Current (IVC1)
1500
mA
Device Voltage (VCC)*
6.0
V
Power Dissipation (PDISS)6
W
Operating Lead Temperature (TL)
-40 to +85
°C
**Max RF output Power for 50
Ω con-
tinuous long term operation
30
dBm
Max Modulated (***OFDM) RF Input
Power for 50
Ω output load
28
dBm
Max Modulated (***OFDM) RF Input
Power for 10:1 VSWR output load
21
dBm
Storage Temperature Range
-40 to +150
°C
Operating Junction Temperature (TJ)+150
°C
ESD Human Body Model
1000
V
Moisture Sensitivity Level
MSL 1
*No RF Drive
**With specified application circuit
***Modulation schemes include 802.11a/g, 802.16
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(TJ-TL)/RTH, j-l
Parameter
Units
5.15GHz 5.35GHz 5.7GHz 5.9GHz
Gain @ POUT=26dBm
dB
8.8
9.0
9.4
8.8
P1dB
dBm
32.7
32.2
33.2
32.5
POUT @ 2.5% EVM
dBm
25.3
25.1
25.3
25.0
Current @ POUT 2.5% EVM
mA
632
631
670
670
Input Return Loss
dB
10
13
19
19
Output Return Loss
dB
15
13
15
13
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
1
2
3
6
5
4
VBIAS
RFIN
VPC
VDET
RFOUT/VCC
NC
Bias
GND
GND


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