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TC1014-3.0VCT bảng dữ liệu(PDF) 7 Page - TelCom Semiconductor, Inc |
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TC1014-3.0VCT bảng dữ liệu(HTML) 7 Page - TelCom Semiconductor, Inc |
7 / 10 page TC1015 2 100mA CMOS LDO WITH SHUTDOWN AND REFERENCE BYPASS PRELIMINARY INFORMATION TC1015-01-6/5/97 ABSOLUTE MAXIMUM RATINGS* Input Voltage ................................................................. 7V Output Voltage .................................. (– 0.3) to (VIN + 0.3) Power Dissipation .................... Internally Limited (Note 7) Operating Temperature .................... – 40 °C < TJ < 125°C Storage Temperature ............................ – 65 °C to +150°C Maximum Voltage On Any Pin .......... VIN + 0.3V to – 0.3V *Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS: VIN = VOUT + 1V, IL = 100µA, CL = 3.3µF, SHDN > VIH, TA = 25 °C, unless otherwise noted. Boldface type specifications apply for junction temperatures of – 40 °C to +125°C. Symbol Parameter Test Conditions Min Typ Max Units VIN Input Operating Voltage — — 6.5 V IOUTMAX Maximum Output Current 100 —— mA VOUT Output Voltage Note 1 VR – 2.5% VR ±0.5% VR + 2.5% V TCVOUT VOUT Temperature Coefficient Note 2 20 — ppm/ °C 40 ∆VOUT/∆VIN Line Regulation (VR + 1V) < VIN < 6V — 0.01 — % ∆VOUT/VOUT Load Regulation IL = 1.0mA to IOUTMAX — 0.5 — % (Note 3) VIN – VOUT Dropout Voltage (Note 4) IL = 0.1mA — 20 — mV IL = 20mA 70 IL = 50mA 93 IL =100mA 112 (Note 4) IGND Ground Pin Current IL = IOUTMAX, (Note 5) —— 0 µA IIN Supply Current SHDN = VIH, IL = 0 — 50 — µA IINSD Shutdown Supply Current SHDN = 0V — — 0.05 µA PSRR Power Supply Rejection Ratio FRE ≤ 1kHz — 64 — dB IOUTSC Output Short Circuit Current VOUT = 0V — 300 500 mA ∆VOUT/∆PD Thermal Regulation Note 6 — 0.04 — %/W eN Output Noise IL = IOUTMAX — 260 — nV/ √Hz 470pF from Bypass to GND SHDN Input VIH SHDN Input High Threshold VIN = 2.5V to 6.5V 45 — — %VIN VIL SHDN Input Low Threshold VIN = 2.5V to 6.5V — — 15 %VIN NOTES: 1. VR is the regulator output voltage setting. VR = 2.5V, 2.7V, 3.0V, 3.3V, 5.0V. 2. TCVOUT = (VOUTMAX – VOUTMIN) x 10 6 VOUT x ∆T 3. Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested over a load range from 1.0mA to the maximum specified output current. Changes in output voltage due to heating effects are covered by the thermal regulation specification. 4. Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal value at a 1V differential. 5. Ground pin current is the regulator pass transistor gate current. The total current drawn from the input supply is the sum of the load current, ground current and supply current (i.e. IIN = ISUPPLY + IGND + ILOAD). 6. Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied, excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10msec. 7. The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction temperature and the thermal resistance from junction-to-air (i.e. TA, TJ, θJA). Exceeding the maximum allowable power dissipation causes the device to initiate thermal shutdown. Please see Thermal Considerations section of this data sheet for more details. . |
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