TP2424 datasheet(2/2 Pages) SUTEX

tên linh kiện	TP2424

Giải thích chi tiết về linh kiện	P-Channel Enhancement-Mode Vertical DMOS FETs

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nhà sản xuất	SUTEX [Supertex, Inc]

Trang chủ	http://www.supertex.com

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1235 Bordeaux Drive, Sunnyvale, CA 94089

TEL: (408) 744-0100 • FAX: (408) 222-4895

www.supertex.com

11/12/01

TP2424

Switching Waveforms and Test Circuit

90%

10%

90%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

Thermal Characteristics

Package

I

D (continuous)*

I

D (pulsed)

Power Dissipation

θjc

θja

I

DR*IDRM

@ TA = 25°C

°C/W

TO-243AA

-316mA

-1.9A

1.6W†

15

78†

-316mA

-1.9A

* I

D (continuous) is limited by max rated Tj.

† Mounted on FR5 board, 25mm x 25mm x 1.57mm. Significant P

D increase possible on ceramic substrate.

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BV

DSS

Drain-to-Source

-240

V

GS = 0V, ID = -250µA

Breakdown Voltage

VGS(th)

Gate Threshold Voltage

-1.0

-2.4

V

VGS = VDS, ID= -1.0mA

∆VGS(th)

Change in V

GS(th) with Temperature

4.5

mV/°CVGS = VDS, ID= -1.0mA

IGSS

Gate Body Leakage

-100

nA

VGS = ± 20V, VDS = 0V

IDSS

Zero Gate Voltage Drain Current

-10.0

µAVGS = 0V, VDS = Max Rating

-1.0

mA

V

GS = 0V, VDS = 0.8 Max Rating

TA = 125°C

I

D(ON)

ON-State Drain Current

-0.3

V

GS = -4.5V, VDS = -25V

-0.8

VGS = -10V, VDS = -25V

RDS(ON)

10.0

Ω

VGS = -4.5V, ID = -150mA

8.0

V

GS = -10V, ID = -500mA

∆RDS(ON)

Change in RDS(ON) with Temperature

0.75

%/°CVGS = -10V, ID = -500mA

GFS

Forward Transconductance

150

m

VDS = -25V, ID = -200mA

C

ISS

Input Capacitance

200

COSS

Common Source Output Capacitance

100

pF

C

RSS

Reverse Transfer Capacitance

40

t

d(ON)

Turn-ON Delay Time

20

tr

Rise Time

30

t

d(OFF)

Turn-OFF Delay Time

35

t

f

Fall Time

25

VSD

Diode Forward Voltage Drop

-1.5

V

VGS = 0V, ISD = -500mA

t

rr

Reverse Recovery Time

300

ns

V

GS = 0V, ISD = -500mA

Notes:

1.All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2.All A.C. parameters sample tested.

Electrical Characteristics (@ 25°C unless otherwise specified)

A

ns

VDD = -25V,

I

D = -250mA,

R

GEN = 25Ω

VGS = 0V, VDS = -25V

f = 1.0 MHz

Static Drain-to-Source

ON-State Resistance

Số phần tương tự - TP2424

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Supertex, Inc	TP2424	347Kb / 3P	P-Channel Enhancement Mode Vertical DMOS FETs
Microchip Technology	TP2424	269Kb / 12P	P-Channel Enhancement-Mode Vertical DMOS FET 05/14/19
Supertex, Inc	TP2424N8-G	347Kb / 3P	P-Channel Enhancement Mode Vertical DMOS FETs
Microchip Technology	TP2424N8G	269Kb / 12P	P-Channel Enhancement-Mode Vertical DMOS FET 05/14/19

More results

Mô tả tương tự - TP2424

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More results

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