TP0604 datasheet(2/4 Pages) SUTEX

tên linh kiện	TP0604

Giải thích chi tiết về linh kiện	P-Channel Enhancement-Mode Vertical DMOS FETs

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nhà sản xuất	SUTEX [Supertex, Inc]

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Package

ID (continuous)*

ID (pulsed)

Power Dissipation

θjc

θja

IDR*IDRM

@ TC = 25°C

°C/W

TO-92

-0.43A

-4.2A

1W

125

170

-0.43A

-4.2A

SOW-20

Refer to Enhancement Mode MOSFET Arrays Section

* I

D (continuous) is limited by max rated Tj.

TP0604

Thermal Characteristics

90%

10%

90%

10%

PULSE

GENERATOR

V

DD

R

L

OUTPUT

D.U.T.

t

(ON)

t

d(ON)

t

(OFF)

t

d(OFF)

t

F

t

r

INPUT

OUTPUT

0V

V

DD

R

gen

0V

-10V

Switching Waveforms and Test Circuit

Symbol

Parameter

Min

Typ

Max

Unit

Conditions

BVDSS

-40

VGS(th)

Gate Threshold Voltage

-1.0

-2.4

V

VGS = VDS, ID = -1.0mA

∆VGS(th)

Change in VGS(th) with Temperature

-3.0

-4.5

mV/°CVGS = VDS, ID = -1.0mA

I

GSS

Gate Body Leakage

-100

nA

V

GS = ±20V, VDS = 0V

IDSS

Zero Gate Voltage Drain Current

-10

µAVGS = 0V, VDS = Max Rating

-1.0

mA

VGS = 0V, VDS = 0.8 Max Rating

TA = 125°C

ID(ON)

ON-State Drain Current

-0.4

-0.6

VGS = -5V, VDS = -20V

-2.0

-3.3

V

GS = -10V, VDS = -20V

RDS(ON)

2.0

3.5

VGS = -5V, ID = -250mA

1.5

2.0

VGS = -10V, ID = -1.0A

∆RDS(ON)

Change in R

DS(ON) with Temperature

0.75

1.2

%/°CVGS = -10V, ID = -1.0A

GFS

Forward Transconductance

0.4

0.6

VDS = -20V, ID = -1.0A

C

ISS

Input Capacitance

95

150

C

OSS

Common Source Output Capacitance

85

120

pF

CRSS

Reverse Transfer Capacitance

35

60

t

d(ON)

Turn-ON Delay Time

5.0

8

t

r

Rise Time

7.0

18

td(OFF)

Turn-OFF Delay Time

10

15

t

f

Fall Time

6.0

19

V

SD

Diode Forward Voltage Drop

-1.3

-2.0

V

GS = 0V, ISD = -1.5A

trr

Reverse Recovery Time

300

ns

VGS = 0V, ISD = -1.5A

Notes:

1. All D.C. parameters 100% tested at 25°C unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)

2. All A.C. parameters sample tested.

VVGS = 0V, ID = -2.0mA

Drain-to-Source Breakdown Voltage

A

Ω

Static Drain-to-Source

ON-State Resistance

VGS = 0V, VDS = -20V

f = 1 MHz

VDD = -20V

ns

I

D = -1.0A

RGEN = 25Ω

Electrical Characteristics (@ 25°C unless otherwise specified)

Số phần tương tự - TP0604

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Supertex, Inc	TP0604	697Kb / 5P	P-Channel Enhancement-Mode Vertical DMOS FET
Microchip Technology	TP0604	311Kb / 14P	P-Channel Enhancement-Mode Vertical DMOS FET 05/14/19
Supertex, Inc	TP0604N3-G	697Kb / 5P	P-Channel Enhancement-Mode Vertical DMOS FET
	TP0604N3-GP002	697Kb / 5P	P-Channel Enhancement-Mode Vertical DMOS FET
	TP0604N3-GP003	697Kb / 5P	P-Channel Enhancement-Mode Vertical DMOS FET

More results

Mô tả tương tự - TP0604

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More results

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