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VN770 bảng dữ liệu(PDF) 4 Page - STMicroelectronics |
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VN770 bảng dữ liệu(HTML) 4 Page - STMicroelectronics |
4 / 10 page PROTECTION CIRCUITS DUAL HIGH SIDE SWITCH The simplest way to protect the device against a continuous reverse battery voltage (-26V) is to insert a a small resistor between pin 2 (GND) and ground. The suggested resistance value is about 150 Ω. In any case the maximum voltage drop on this resistor should not overcome 0.5V. If there is no need for the control unit to handle external analog signals referred to the power GND, the best approach is to connect the reference potential of the control unit to the device ground (see application circuit in fig. 3), which becomes the common signal GND for the whole control board avoiding shift of Vih,Vil and Vstat. TRUTH TABLE (for Dual high-side switch only) I NPUT 1 INPUT 2 SO URCE 1 SOURCE 2 DIAG NO STI C Normal Operation L H L H L H H L L H L H L H H L H H H H Under-voltage X X L L H T hermal Shut down Channel 1 HX L X L Channel 2 XH X L L O pen Load Channel 1 H L X L H L X L L L Channel 2 X L H L X L H L L L O utput Shorted to VCC Channel 1 H L X L H H X L L L Channel 2 X L H L X L H H L L NOTE: The low-side switches have the fault feedback which can be detected by monitoring the voltage at the input pins. L = Logic LOW, H = Logic HIGH, X = Don’t care ABSOLUTE MAXIMUM RATING (-40 oC< Tj < 150 oC) HIGH SIDE SWITCH Symb ol Parameter Value Uni t V(BR)DSS Drain-Source Brekdown Voltage 40 V IOUT Output Current (continuous) 9 A IR Reverse O utput Current -9 A IIN Input Current ±10 mA -VCC Reverse Supply Current -4 V ISTAT St atus Current ±10 mA VESD Elect rostatic Discharge (C = 100 pF, R = 1. 5 K Ω) 2000 V Ptot Power Dissipat ion @ Tc =25 oC Int ernally Limited W Tj Junct ion Operat ing Temperature -40 to 150 oC Tstg St orage Temperature -55 to 150 oC VN770 4/10 |
Số phần tương tự - VN770 |
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Mô tả tương tự - VN770 |
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