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BUK7608-40B bảng dữ liệu(PDF) 5 Page - NXP Semiconductors |
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BUK7608-40B bảng dữ liệu(HTML) 5 Page - NXP Semiconductors |
5 / 12 page BUK7608-40B_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 24 September 2008 5 of 12 NXP Semiconductors BUK7608-40B N-channel TrenchMOS standard level FET 6. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID =0.25mA; VGS =0V; Tj =25°C 40 - - V ID =0.25mA; VGS =0V; Tj =-55 °C 36 - - V VGS(th) gate-source threshold voltage ID =1mA; VDS = VGS; Tj =25°C; see Figure 9; see Figure 10 234 V ID =1mA; VDS = VGS; Tj =-55 °C; see Figure 9; see Figure 10 --4.4 V ID =1mA; VDS = VGS; Tj = 175 °C; see Figure 9; see Figure 10 1- - V IDSS drain leakage current VDS =40V; VGS =0V; Tj = 25 °C - 0.02 1 µA VDS =40V; VGS =0V; Tj = 175 °C - - 500 µA IGSS gate leakage current VDS =0V; VGS =20V; Tj = 25 °C - 2 100 nA VDS =0V; VGS =-20 V; Tj = 25 °C - 2 100 nA RDSon drain-source on-state resistance VGS =10V; ID =25A; Tj = 175 °C; see Figure 11; see Figure 12 --15.2 m Ω VGS =10V; ID =25A; Tj =25°C; see Figure 12; see Figure 11 -6.6 8 m Ω Dynamic characteristics QG(tot) total gate charge ID =25A; VDS =32V; VGS =10V; Tj =25°C; see Figure 14 -36 - nC QGS gate-source charge - 9 - nC QGD gate-drain charge - 12 - nC Ciss input capacitance VGS =0V; VDS =25V; f=1MHz; Tj =25°C; see Figure 15 - 2017 2689 pF Coss output capacitance - 486 583 pF Crss reverse transfer capacitance - 213 291 pF td(on) turn-on delay time VDS =30V; RL =1.2 Ω; VGS =10V; RG(ext) =10 Ω; Tj =25 °C -20 - ns tr rise time - 51 - ns td(off) turn-off delay time - 20 - ns tf fall time - 33 - ns LD internal drain inductance from drain lead 6 mm from package to center of die; Tj =25°C -4.5 - nH from upper edge of drain mounting base to centre of die; Tj =25°C -2.5 - nH LS internal source inductance from source lead 6 mm from package to source bond pad; Tj =25°C -7.5 - nH Source-drain diode VSD source-drain voltage IS =25A; VGS =0V; Tj = 25 °C; see Figure 13 - 0.85 1.2 V trr reverse recovery time IS =20A; dIS/dt = -100 A/µs; VGS =-10 V; VDS =20V; Tj =25°C -53 - ns Qr recovered charge - 44 - nC |
Số phần tương tự - BUK7608-40B |
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Mô tả tương tự - BUK7608-40B |
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