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BUK7608-40B bảng dữ liệu(PDF) 2 Page - NXP Semiconductors |
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2 / 12 page BUK7608-40B_4 © NXP B.V. 2008. All rights reserved. Product data sheet Rev. 04 — 24 September 2008 2 of 12 NXP Semiconductors BUK7608-40B N-channel TrenchMOS standard level FET 2. Pinning information [1] It is not possible to make a connection to pin 2. 3. Ordering information 4. Limiting values Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate SOT404 (D2PAK) 2D drain [1] 3S source mb D mounting base; connected to drain mb 13 2 S D G mbb076 Table 3. Ordering information Type number Package Name Description Version BUK7608-40B D2PAK Plastic single-ended surface-mounted package (D2PAK); 3 leads (one lead cropped) SOT404 Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C - 40 V VDGR drain-gate voltage RGS =20kΩ -40 V VGS gate-source voltage -20 20 V ID drain current Tmb =25°C; VGS =10V; see Figure 1; see Figure 3; [1] -101 A Tmb =100 °C; VGS = 10 V; see Figure 1; [1] -71 A Tmb =25°C; VGS =10V; see Figure 1; see Figure 3; [2] -75 A IDM peak drain current Tmb =25°C; tp ≤ 10 µs; pulsed; see Figure 3 -407 A Ptot total power dissipation Tmb =25°C; see Figure 2 -157 W Tstg storage temperature -55 175 °C Tj junction temperature -55 175 °C Source-drain diode IS source current Tmb =25°C; [1] -101 A Tmb =25°C; [2] -75 A ISM peak source current tp ≤ 10 µs; pulsed; Tmb =25°C - 407 A |
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