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TDE1798DP bảng dữ liệu(PDF) 3 Page - STMicroelectronics |
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3 / 14 page THERMAL DATA Symbol Description Value Unit Rth j-case Rth j-ambient Thermal Resistance Junction-case (1) Thermal Resistance Junction-ambient (1) max. max. 30 90 °C/W °C/W 1) Devices bounded on a 40cm 2 glass-epoxy printed circuit 0.15cm thick with 4cm2 of copper ELECTRICAL CHARACTERISTICS (note 2) TDE -25 °C ≤ Tj ≤ +85°C, 6V ≤ VCC ≤ +35V, Io ≤ 500mA (unless otherwise specified). Symbol Parameter Test Condition Min. Typ. Max. Unit VIO Input Offset Voltage (note 3) – 2 50 mV ICC Power Supply Current Output High (Tamb = +25 °C, Io = 500mA) Output Low – – 6.5 2 8 4 mA mA IIB Input Bias Current – 15 40 µA VICR Common-mode Input Voltage Range (note 4) 1 – 45 V VI Input Voltage Range Vref > +1V, (note 4 and 5) -25 – 45 V ISC Short-circuit Output Current VCC = 30V, t = 10ms 0.7 0.9 1.3 A VCC -VO Output Saturation Voltage IO = 500mA (|V + I- V- I|> 50mV) – 1 1.25 V IOL Output Low Leakage Current Tj = +85 °C(VCC = 30V, VO = 0V) – 10 100 µA I(pin 1) source I(pin 6) sink Available Alarm Output Current Source (V(pin 1) =VCC - 2.5V) Sink (in thermal shut-down) V(pin 6) =2V 4 6 8 15 – – mA mA IRH IRL Reset Input Current – -1 15 0 40 +1 µA µA Vth Reset Threshold 0.8 1.4 2 V Ireset Reset Output Sink Current (in thermal shut-down) for Vreset ≤ +0.8V 2–– mA IOL(open GND) Output Leakage Current (open ground) – 10 100 µA VBRVEO Output Transistor Avalanche Volt. VCC -VO 65 – 110 V Notes: 2) For operating at high temperature, the TDE1798 must be derated based on a 150 °C maximum junction temperature and the junction-ambient thermal resistance. 3) The offset voltage given is the maximum value of input differential voltage required to drive the output voltage within 2V of the ground or the supply voltage; 4) Input voltage range is independent of the supply voltage; 5) The reference input can be the inverting or the non-inverting one. TDE1798 3/14 |
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