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SS10PH10-E3/86A bảng dữ liệu(PDF) 1 Page - Vishay Siliconix

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Giải thích chi tiết về linh kiện  High Current Density Surface Mount High-Voltage Schottky Rectifier
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New Product
SS10PH9 & SS10PH10
Vishay General Semiconductor
Document Number: 89000
Revision: 30-Jul-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
1
High Current Density Surface Mount
High-Voltage Schottky Rectifier
FEATURES
• Very low profile - typical height of 1.1 mm
• Ideal for automated placement
• Guardring for overvoltage protection
• High barrier technology, TJ = 175 °C
maximum
• Low leakage current
• Meets MSL level 1, per J-STD-020
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
• Halogen-free
MECHANICAL DATA
Case: TO-277A (SMPC)
Molding compound meets UL 94V-0 flammability
rating.
Base P/N-E3 - RoHS compliant, commercial grade
Base P/NHE3 - RoHS compliant, high reliability/
automotive grade (AEC-Q101 qualified)
Base P/N-M3 - halogen-free and RoHS compliant,
commercial grade
Base P/NHM3 - halogen-free and RoHS compliant,
high reliability/automotive grade (AEC-Q101 qualified)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 and M3 suffix meets JESD 201 class 1A whisker
test, HE3 and HM3 suffix meets JESD 201 class 2
whisker test
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching
mode power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
200 A
EAS
20 mJ
VF at IF = 10 A
0.661 V
IR
0.3 µA
TJ max.
175 °C
K
2
1
TO-277A (SMPC)
Anode 1
Anode 2
Cathode
K
eSMPTM Series
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
SS10PH9
SS10PH10
UNIT
Device marking code
10H9
10H10
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Maximum average forward rectified current (Fig. 1)
IF(AV)
10
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
IFSM
200
A
Non-repetitive avalanche energy at IAS = 2 A, L = 10 mH, TJ = 25 °C
EAS
20
mJ
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 175
°C


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