công cụ tìm kiếm bảng dữ liệu linh kiện điện tử |
|
SI1054X-T1-GE3 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix |
|
SI1054X-T1-GE3 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number: 69579 S-80641-Rev. B, 24-Mar-08 Vishay Siliconix Si1054X New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = 250 µA 12 V VDS Temperature Coefficient ΔV DS/TJ ID = 250 µA 12.23 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ - 2.76 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 0.4 1 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 8 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 12 V, VGS = 0 V 1nA VDS = 12 V, VGS = 0 V, TJ = 85 °C 10 µA On-State Drain Currenta ID(on) VDS = ≥ 5 V, VGS = 4.5 V 6 A Drain-Source On-State Resistancea RDS(on) VGS = 4.5 V, ID = 1.32 A 0.079 0.095 Ω VGS = 2.5 V, ID = 1.26 A 0.087 0.104 VGS = 1.8 V, ID = 0.88 A 0.095 0.114 Forward Transconductance gfs VDS = 4.5 V, ID = 1.32 A 6.25 S Dynamicb Input Capacitance Ciss VDS = 6 V, VGS = 0 V, f = 1 MHz 480 pF Output Capacitance Coss 142 Reverse Transfer Capacitance Crss 92 Total Gate Charge Qg VDS = 6 V, VGS = 5 V, ID = 1.32 A 5.71 8.57 nC VDS = 6 V, VGS = 4.5 V, ID = 1.32 A 5.25 7.9 Gate-Source Charge Qgs 0.83 Gate-Drain Charge Qgd 1.54 Gate Resistance Rg f = 1 MHz 3.5 5.25 Ω Turn-On Delay Time td(on) VDD = 6 V, RL = 5.71 Ω ID ≅ 1.05 A, VGEN = 4.5 V, Rg = 1 Ω 5.5 8.25 ns Rise Time tr 13 19.5 Turn-Off Delay Time td(off) 37 55.5 Fall Time tf 14 21 Drain-Source Body Diode Characteristics Pulse Diode Forward Currenta ISM 6A Body Diode Voltage VSD IS = 1.0 A 0.8 1.2 V Body Diode Reverse Recovery Time trr IF = 1.0 A, di/dt = 100 A/µs 19.3 28.95 ns Body Diode Reverse Recovery Charge Qrr 5.8 8.7 nC Reverse Recovery Fall Time ta 7.4 ns Reverse Recovery Rise Time tb 11.9 |
Số phần tương tự - SI1054X-T1-GE3 |
|
Mô tả tương tự - SI1054X-T1-GE3 |
|
|
Link URL |
Chính sách bảo mật |
ALLDATASHEET.VN |
Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không? [ DONATE ] |
Alldatasheet là | Quảng cáo | Liên lạc với chúng tôi | Chính sách bảo mật | Trao đổi link | Tìm kiếm theo nhà sản xuất All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |