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SI1021R-T1-E3 bảng dữ liệu(PDF) 1 Page - Vishay Siliconix |
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SI1021R-T1-E3 bảng dữ liệu(HTML) 1 Page - Vishay Siliconix |
1 / 5 page Vishay Siliconix Si1021R Document Number: 71410 S-81543-Rev. D, 07-Jul-08 www.vishay.com 1 P-Channel 60-V (D-S) MOSFET FEATURES • Halogen-free Option Available •TrenchFET® Power MOSFETs • High-Side Switching • Low On-Resistance: 4 Ω • Low Threshold: - 2 V (typ.) • Fast Switching Speed: 20 ns (typ.) • Low Input Capacitance: 20 pF (typ.) • Miniature Package • ESD Protected: 2000 V APPLICATIONS • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories, Transistors, etc. • Battery Operated Systems • Power Supply Converter Circuits • Solid-State Relays BENEFITS • Ease in Driving Switches • Low Offset Voltage • Low-Voltage Operation • High-Speed Circuits • Easily Driven without Buffer • Small Board Area PRODUCT SUMMARY VDS(min.) (V) RDS(on) (Ω)VGS(th) (V) ID (mA) - 60 4.0 at VGS = - 10 V - 1 to 3.0 - 190 Notes: a. Surface mounted on FR4 board. b. Pulse width limited by maximum junction temperature. Marking Code: F SC-75A (SOT-416) Top View 2 1 S D G 3 Ordering Information: Si1021R-T1-E3 (Lead (Pb)-free) Si1021R-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID - 190 mA TA = 85 °C - 135 Pulsed Drain Currentb IDM - 650 Power Dissipationa TA = 25 °C PD 250 mW TA = 85 °C 130 Maximum Junction-to-Ambienta RthJA 500 °C/W Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C RoHS COMPLIANT |
Số phần tương tự - SI1021R-T1-E3 |
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Mô tả tương tự - SI1021R-T1-E3 |
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