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STP180NS04ZC
Electrical ratings
3/12
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
VDS
Drain-source voltage (VGS = 0)
33 (1)
1.
Voltage is limited by zener diodes
V
VDG
Drain-gate voltage
33 (1)
V
VGS
Gate-source voltage
± 20 (1)
V
ID
(2)
2.
Current limited by wire bonding
Drain current (continuous) at TC = 25 °C
120
A
ID
(2)
Drain current (continuous) at TC=100 °C
120
A
IDG
Drain gate current (continuous)
±50
mA
IGS
Gate-source current (continuous)
±50
mA
IDM
(3)
3.
Pulse width limited by safe operating area
Drain current (pulsed)
480
A
PTOT
Total dissipation at TC = 25 °C
300
W
Derating factor
2
W/°C
VESD(G-S)
Gate-source ESD (HBM-C=100 pF, R=1.5 k
Ω)± 8
kV
VESD(G-D)
Gate-drain ESD (HBM-C=100 pF, R=1.5 k
Ω)± 8
kV
VESD(D-S)
Drain-source ESD (HBM-C=100 pF, R=1.5 k
Ω)± 8
kV
TJ
Tstg
Operating junction temperature
Storage temperature
-55 to 175
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
Rthj-case
Thermal resistance junction-case max
0.50
°C/W
Rthj-amb
Thermal resistance junction-ambient max
62.5
°C/W
Tl
Maximum lead temperature for soldering
purpose
300
°C
Table 4.
Avalanche data
Symbol
Parameter
Value
Unit
IAS
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax
δ < 1%)
80
A
EAS
Single pulse avalanche energy
(starting Tj=25 °C, ID=IAS, VDD=21 V)
(see Figure 17, Figure 14.)
1000
mJ


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