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STU11NM60ND bảng dữ liệu(PDF) 3 Page - STMicroelectronics

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Giải thích chi tiết về linh kiện  N-channel 600V - 0.37廓 - 10A - FDmesh??II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
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STP11NM60ND - STF/I11NM60ND - STU11NM60ND - STD11NM60ND
Electrical ratings
3/18
1
Electrical ratings
Table 2.
Absolute maximum ratings
Symbol
Parameter
Value
Unit
DPAK/I²PAK TO-
220/IPAK
TO-220FP
VDS
Drain-source voltage (VGS=0)
600
V
VGS
Gate-source voltage
± 25
V
ID
Drain current (continuous) at TC = 25°C
10
10 (1)
1.
Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at TC = 100°C
6.3
6.3(1)
A
IDM
(2)
2.
Pulse width limited by safe operating area
Drain current (pulsed)
40
40 (1)
A
PTOT
Total dissipation at TC = 25°C
90
25
W
dv/dt (3)
3.
ISD ≤ 10 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope
40
V/ns
VISO
Insulation withstand voltage (RMS) from all
three leads to external heat sink
(t=1s;TC=25°C)
--
2500
V
Tstg
Storage temperature
-55 to 150
°C
Tj
Max. operating junction temperature
150
°C
Table 3.
Thermal data
Symbol
Parameter
Value
Unit
TO-220 I²PAK DPAK IPAK TO-220FP
Rthj-case
Thermal resistance junction-case
max
1.38
5
°C/W
Rthj-amb
Thermal resistance junction-amb max
62.5
--
100
62.5
°C/W
Rthj-pcb
Thermal resistance junction-pcb max
--
--
50
--
--
°C/W
Tl
Maximum lead temperature for
soldering purposes
300
°C
Table 4.
Avalanche characteristics
Symbol
Parameter
Max value
Unit
IAS
Avalanche current, repetitive or not-repetitive(1)
1.
Pulse width limited by Tj max
3.5
A
EAS
Single pulse avalanche energy (2)
2.
starting Tj= 25 °C, ID=IAS, VDD= 50 V
200
mJ


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