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STH8NB90 bảng dữ liệu(PDF) 1 Page - STMicroelectronics |
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STH8NB90 bảng dữ liệu(HTML) 1 Page - STMicroelectronics |
1 / 9 page 1/9 July 2001 STW8NB90 STH8NB90FI N-CHANNEL 900V - 1.1 Ω - 8 A TO-247/ISOWATT218 PowerMesh™ MOSFET s TYPICAL RDS(on) = 1.1 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an ad- vanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprieraty edge termi- nation structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteris- tics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT ABSOLUTE MAXIMUM RATINGS (•)Pulse width limited by safe operating area (1)ISD ≤8 A, di/dt ≤200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX. TYPE VDSS RDS(on) ID STW8NB90 900 V < 1.45 Ω 8 A STH8NB90FI 900 V < 1.45 Ω 5 A Symbol Parameter Value Unit STW8NB90 STH8NB90FI VDS Drain-source Voltage (VGS = 0) 900 V VDGR Drain-gate Voltage (RGS = 20 kΩ) 900 V VGS Gate- source Voltage ±30 V ID Drain Current (continuos) at TC = 25°C 85 A ID Drain Current (continuos) at TC = 100°C 53 A IDM (q) Drain Current (pulsed) 32 20 A PTOT Total Dissipation at TC = 25°C 200 80 W Derating Factor 1.6 0.64 W/°C dv/dt (1) Peak Diode Recovery voltage slope 4 V/ns VISO Insulation Withstand Voltage (DC) - 2500 V Tstg Storage Temperature –65 to 150 °C Tj Max. Operating Junction Temperature 150 °C INTERNAL SCHEMATIC DIAGRAM 1 2 3 1 2 3 TO-247 ISOWATT218 |
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