STW8NC70Z datasheet(3/8 Pages) STMICROELECTRONICS

tên linh kiện	STW8NC70Z

Giải thích chi tiết về linh kiện	N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH?줚II MOSFET

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STW8NC70Z

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON (RESISTIVE LOAD)

SWITCHING OFF (INDUCTIVE LOAD)

SOURCE DRAIN DIODE

GATE-SOURCE ZENER DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

3. ∆VBV = αT (25°-T) BVGSO(25°)

PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES

The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s

ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be

applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and

cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the

usage of external components.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 350V, ID = 3.5A

RG = 4.7Ω VGS = 10V

(see test circuit, Figure 3)

24

ns

tr

Rise Time

8

ns

Qg

Total Gate Charge

VDD = 560V, ID = 7 A,

VGS = 10V

47

66

nC

Qgs

Gate-Source Charge

11

nC

Qgd

Gate-Drain Charge

19

nC

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 560V, ID = 7 A,

RG =4.7Ω, VGS = 10V

(see test circuit, Figure 5)

11

ns

tf

Fall Time

10

ns

tc

Cross-over Time

19

ns

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

7

A

ISDM (2)

Source-drain Current (pulsed)

28

A

VSD (1)

Forward On Voltage

ISD = 7 A, VGS = 0

1.6

V

trr

Reverse Recovery Time

ISD = 7 A, di/dt = 100A/µs,

VDD = 50V, Tj = 150°C

(see test circuit, Figure 5)

575

ns

Qrr

Reverse Recovery Charge

5.8

µC

IRRM

Reverse Recovery Current

20

A

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

BVGSO

Gate-Source Breakdown

Voltage

Igs=± 1mA (Open Drain)

25

V

αT

Voltage Thermal Coefficient

T=25°C Note(3)

1.3

10-4/°C

Rz

Dynamic Resistance

IGS = 50 mA

90

Ω

Số phần tương tự - STW8NC70Z

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STW8NC80Z	263Kb / 8P	N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH?줚II MOSFET
STMicroelectronics	STW8NC90Z	251Kb / 8P	N-CHANNEL 900V - 1.1 ohm - 7.6A TO-247 Zener-Protected PowerMESH?줚II MOSFET

More results

Mô tả tương tự - STW8NC70Z

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STW8NC80Z	263Kb / 8P	N-CHANNEL 700V - 1.1 ohm - 7A TO-247 Zener-Protected PowerMESH?줚II MOSFET
	STW8NC90Z	251Kb / 8P	N-CHANNEL 900V - 1.1 ohm - 7.6A TO-247 Zener-Protected PowerMESH?줚II MOSFET
	STW10NC70Z	249Kb / 8P	N-CHANNEL 700V - 0.58 ohm - 10.6A TO-247 Zener-Protected PowerMESH?줚II MOSFET
	STW9NC70Z	248Kb / 8P	N-CHANNEL 700V - 0.90 ohm - 7.5A TO-247 Zener-Protected PowerMESH?줚II MOSFET
	STW6NC90Z	243Kb / 8P	N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH?줚II MOSFET
	STW7NC90Z	243Kb / 8P	N-CHANNEL 900V - 1.55ohm - 6A TO-247 Zener-Protected PowerMESH?줚II MOSFET
	STW9NC80Z	248Kb / 8P	N-CHANNEL 800V - 0.82ohm - 9.4A TO-247 Zener-Protected PowerMESH?줚II MOSFET
	STW7NC80Z	248Kb / 8P	N-CHANNEL 800V - 1.5ohm - 6A TO-247 Zener-Protected PowerMESH?줚II MOSFET
	STP3NC70Z	324Kb / 10P	N-CHANNEL 700V - 4.1ohm - 2.5A TO-220/TO-220FP Zener-Protected PowerMESH?줚II MOSFET
	STD2NC70Z	447Kb / 10P	N-CHANNEL 700V - 4.1ohm - 2.3A DPAK/IPAK Zener-Protected PowerMESH?줚II MOSFET

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