STH8NA80 datasheet(1/6 Pages) STMICROELECTRONICS

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STW8NA80

STH8NA80FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

PRELIMINARY DATA

s

TYPICAL RDS(on) = 1.3

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

LOW INTRINSIC CAPACITANCES

s

GATE GHARGE MINIMIZED

s

REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION

This series of POWER MOSFETS represents the

most advanced high voltage technology. The op-

timized cell layout coupled with a new proprietary

edge termination concur to give the device low

RDS(on) and gate charge, unequalled rug-

gedness and superior switching performance.

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLIES (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Valu e

Uni t

STW 8NA80

ST H8NA80FI

VDS

Drain-source Voltage (VGS =0)

800

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

800

V

VGS

G ate-source Volt age

± 30

V

ID

Drain Current (continuous) at Tc =25

oC

7. 2

4. 5

A

ID

Drain Current (continuous) at Tc = 100

oC

4. 5

2. 8

A

IDM(

•)

Drain Current (pulsed)

28. 8

A

Ptot

T otal Dissipation at Tc =25

oC

175

70

W

Derating Factor

1. 4

0.56

W/

oC

VISO

I nsulation W ithstand Voltage (DC)



4000

V

Tstg

Storage T emperature

-65 to 150

oC

Tj

Max. O perat ing Junct ion T emperature

150

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW 8NA80

STH8NA80F I

800 V

<1.50

Ω

<1.50

Ω

7. 2 A

4. 5 A

October 1998

TO-247

ISOWATT218

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2

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1/6

Số phần tương tự - STH8NA80

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
New Jersey Semi-Conduct...	STH8NA80FI	134Kb / 3P	N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
New Jersey Semi-Conduct...	STH8NA80FI	134Kb / 3P	N- CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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Mô tả tương tự - STH8NA80

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