STW80N06-10 datasheet(1/5 Pages) STMICROELECTRONICS

tên linh kiện	STW80N06-10

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STW80N06-10

N - CHANNEL ENHANCEMENT MODE

"ULTRA HIGH DENSITY" POWER MOS TRANSISTOR

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.0085

Ω

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

HIGH CURRENT CAPABILITY

s

175

oC OPERATING TEMPERATURE

s

HIGH dV/dt RUGGEDNESS

s

APPLICATION ORIENTED

CHARACTERIZATION

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

POWER MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

s

SYNCRONOUS RECTIFICATION

®

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)60

V

VGS

Gate-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc = 25

oC80

A

ID

Drain Current (continuous) at Tc = 100

oC60

A

IDM(

•)

Drain Current (pulsed)

320

A

Ptot

Total Dissipation at Tc = 25

oC180

W

Derating Factor

1.2

W/

o C

dV/dt(1)

Peak Diode Recovery voltage slope

5

V/ns

Tstg

Storage Temperature

-65 to 175

o C

Tj

Max. Operating Junction Temperature

175

o C

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW80N06-10

60 V

< 0.010

Ω

80 A

October 1998

TO-247

1

2

3

1/5

Số phần tương tự - STW80N06-10

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STW80NE06-10	82Kb / 8P	N - CHANNEL 60V - 0.0085ohm - 80A - TO-247 STripFET POWER MOSFET
	STW80NF06	303Kb / 14P	N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET
	STW80NF06	314Kb / 14P	N-channel 60V - 0.0065 - 80A TO-220/D2PAK/TO-247 STripFET II Power MOSFET
	STW80NF10	251Kb / 8P	N-CHANNEL 100V - 0.012ohm - 80A TO-247 LOW GATE CHARGE STripFET??POWER MOSFET
	STW80NF12	501Kb / 12P	N-CHANNEL 120V-0.013ohm-80A TO-220/TO-247/TO-220FP/D짼PAK STripFET??II POWER MOSFET

More results

Mô tả tương tự - STW80N06-10

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
STMicroelectronics	STP80N06-10	77Kb / 5P	N - CHANNEL ENHANCEMENT MODE ULTRA HIGH DENSITY POWER MOS TRANSISTOR
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	STP38N06	134Kb / 11P	N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
	STP40N03L-20	65Kb / 7P	N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
	STD20N06	174Kb / 10P	N - CHANNEL ENHANCEMENT MODE ?쓀LTRA HIGH DENSITY??POWER MOS TRANSISTOR
	STH60N10	246Kb / 11P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
	STP15N05L	201Kb / 10P	N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR November 1996
	IRF630FI	190Kb / 6P	N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR
	STP3N50XI	289Kb / 7P	N-CHANNEL enhancement mode power mos transistor

More results

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