STH7NA100FI datasheet(1/6 Pages) STMICROELECTRONICS

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STW7NA100

STH7NA100FI

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

s

TYPICAL RDS(on) = 1.45

Ω

s

± 30V GATE TO SOURCE VOLTAGE RATING

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

GATE CHARGE MINIMISED

s

REDUCED THRESHOLD VOLTAGE SPREAD

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLY (SMPS)

s

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STW7NA100

STH7NA100FI

VDS

Drain-source Voltage (VGS = 0)

1000

V

VDGR

Drain- gate Voltage (RGS = 20 k

Ω)

1000

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc = 25

oC

7

4.3

A

ID

Drain Current (continuous) at Tc = 100

oC

4.4

2.7

A

IDM(

•)

Drain Current (pulsed)

28

A

Ptot

Total Dissipation at Tc = 25

oC

190

70

W

Derating Factor

1.52

0.56

W/

oC

VISO

Insulation Withstand Voltage (DC)



4000

V

Tstg

Storage Temperature

-65 to 150

oC

Tj

Max. Operating Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on)

ID

STW7NA100

STH7NA100FI

1000 V

< 1.7

Ω

< 1.7

Ω

7 A

4.3 A

March 1998

TO-247

ISOWATT218

1

2

3

1

2

3

1/6

Số phần tương tự - STH7NA100FI

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